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Hexagonal boron nitride (h-BN) is a tantalizing material for solid-state quantum engineering. Analogously to three-dimensional wide-bandgap semiconductors like diamond, h-BN hosts isolated defects exhibiting visible fluorescence, and the…

Mesoscale and Nanoscale Physics · Physics 2018-04-30 Annemarie L. Exarhos , David A. Hopper , Richard R. Grote , Audrius Alkauskas , Lee C. Bassett

Large, high-quality layers of hexagonal boron nitride (hBN) are a prerequisite for further advancement in scientific investigation and technological utilization of this exceptional 2D material. Here we address this demand by investigating…

Mesoscale and Nanoscale Physics · Physics 2019-12-23 Marin Petrović , Michael Horn-von Hoegen , Frank-J. Meyer zu Heringdorf

Two-dimensional (2D) materials are increasingly being used as active components in nanoscale devices. Many interesting properties of 2D materials stem from the reduced and highly non-local electronic screening in two dimensions. While…

Materials Science · Physics 2020-06-01 Keian Noori , Nicholas Lin Quan Cheng , Fengyuan Xuan , Su Ying Quek

Quantum emitters in two-dimensional layered hexagonal boron nitride are quickly emerging as a highly promising platform for next-generation quantum technologies. However, precise identification and control of defects are key parameters to…

Mesoscale and Nanoscale Physics · Physics 2024-08-13 M. S. Islam , R. K. Chowdhury , M. Barthelemy , L. Moczko , P. Hebraud , S. Berciaud , A. Barsella , F. Fras

Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with hBN flakes doped with…

Defects play a key role in determining the properties of most materials and, because they tend to be highly localized, characterizing them at the single-defect level is particularly important. Scanning tunneling microscopy (STM) has a…

By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped…

Mesoscale and Nanoscale Physics · Physics 2012-09-06 S. J. Haigh , A. Gholinia , R. Jalil , S. Romani , L. Britnell , D. C. Elias , K. S. Novoselov , L. A. Ponomarenko , A. K. Geim , R. Gorbachev

Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS2, have the potential to be widely used in electronic devices and sensors due to their high carrier mobility and tunable band structure. In 2D TMD devices, surface and…

Atomic defects in solid-state materials are building blocks for future quantum technologies, such as quantum communication networks, computers, and sensors. Until recently, a handful of defects in a small selection of host materials have…

Mesoscale and Nanoscale Physics · Physics 2025-10-07 Tobias Vogl , Viktor Ivády , Isaac J. Luxmoore , Hannah L. Stern

Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While commonly referred to as hexagonal BN (hBN), the sp$^2$-bonded BN…

Boron vacancies (VB${^-}$) in hexagonal boron-nitride (hBN) have sparked great interest in recent years, due to their electronic spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other…

Dielectrics are insulating materials used in many different electronic devices and play an important role in all of them. Current advanced electronic devices use dielectric materials with a high dielectric constant and avoid high leakage…

Applied Physics · Physics 2019-05-17 Fei Hui

Bulk hexagonal boron nitride (hBN) is a highly nonlinear natural hyperbolic material that attracts major attention in modern nanophotonics applications. However, studies of its optical properties in the visible part of the spectrum and…

In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low…

The reduced dimensionality in two-dimensional materials leads a wealth of unusual properties, which are currently explored for both fundamental and applied sciences. In order to study the crystal structure, edge states, the formation of…

Mesoscale and Nanoscale Physics · Physics 2021-01-04 Felix Kern , Martin Linck , Daniel Wolf , Nasim Alem , Himani Arora , Sibylle Gemming , Artur Erbe , Alex Zettl , Bernd Büchner , Axel Lubk

Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this…

Hexagonal boron nitride (h-BN) is a key ingredient for various two-dimensional (2D) van der Waals heterostructure devices, but the exact role of h-BN encapsulation in relation to the internal defects of 2D semiconductors remains unclear.…

Two-dimensional hexagonal boron nitride offers intriguing opportunities for advanced studies of light-matter interaction at the nanoscale, specifically for realizations in quantum nanophotonics. Here, we demonstrate the engineering of…

Applied Physics · Physics 2020-04-20 Mehran Kianinia , Simon White , Johannes E. Fröch , Carlo Bradac , Igor Aharonovich

Hexagonal boron nitride (BN) is widely used as a substrate and gate insulator for two-dimensional (2D) electronic devices. The studies on insulating properties and electrical reliability of BN itself, however, are quite limited. Here, we…

Materials Science · Physics 2015-10-08 Y. Hattori , K. Watanabe , T. Taniguchi , K. Nagashio

Lattice deformation is a powerful way to engineer the properties of two-dimensional (2D) materials, making their precise measurement an important challenge for both fundamental science and technological applications. Here, we demonstrate…

Materials Science · Physics 2026-02-02 Z. Mu , Z. Zhang , J. Fraunié , C. Robert , G. Seine , B. Gil , G. Cassabois , V. Jacques