Related papers: Voltage-driven 90 switching of bulk perpendicular …
As a prototypical half-metallic ferromagnet, La0.67Sr0.33MnO3 (LSMO) has been extensively studied due to its versatile physical properties and great potential in spintronic applications. However, the weak perpendicular magnetic anisotropy…
The study investigates the manipulation of the magnetic anisotropy in a thick (1 $\mu$m) Ni$_{90}$Fe$_{10}$ layer electrodeposited on a ferroelectric BaTiO$_3$(001) substrate, using a combination of Magneto-optical Kerr Effect,…
We report on the study of both perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interaction (DMI) at an oxide/ferromagnetic metal (FM) interface, i.e. BaTiO3 (BTO)/CoFeB. Thanks to the functional properties of the BTO film…
We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we…
We carefully investigated the in-plane magnetic reversal and corresponding magnetic domain structures in Fe/GaAs/piezo-transducer heterostructure using longitudinal magneto-optical Kerr microscopy. The coexistence of the <100> cubic…
In this study, to obtain perpendicular magnetic tunnel junctions (p-MTJs) using half-metallic ferromagnets (HMFs), several methods were developed to induce perpendicular magnetic anisotropy (PMA) in full-Heusler Co2FeSi (CFS) alloy thin…
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge…
By studying coupled ferro- (FM) and antiferromagnetic (AFM) thin film systems, we obtain an in-plane magnetic reorientation as a function of temperature and FM film thickness. The interlayer exchange coupling causes a uniaxial anisotropy,…
The magnetization reversal process in thin-film ferromagnetic elements with surface anisotropy of various shapes and sizes is investigated by means of numerical simulation. The dependence of the perpendicular and in-plane hysteresis loops…
Voltage controlled magnetic anisotropy (VCMA) is an efficient way to manipulate the magnetization states in nanomagnets, promising for low-power spintronic applications. The underlying physical mechanism for VCMA is known to involve a…
Recent research on CoPd alloys with perpendicular magnetic anisotropy (PMA) has suggested that they might be useful as the pinning layer in CoFeB/MgO-based perpendicular magnetic tunnel junctions (pMTJ's) for various spintronic applications…
Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with…
Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on…
Magnetocrystalline anisotropy, the microscopic origin of permanent magnetism, is often explained in terms of ferromagnets. However, the best performing permanent magnets based on rare earths and transition metals (RE-TM) are in fact…
CuMnAs with perpendicular magnetic anisotropy is proposed as an active material for antiferromagnetic memory. Information can be stored in the antiferromagnetic domain state, while writing and readout can rely on the existence of the…
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or…
The temperature-driven reorientation transition which, up to now, has been studied by use of Heisenberg-type models only, is investigated within an itinerant-electron model. We consider the Hubbard model for a thin fcc(100) film together…
A characteristic dependence of voltage control of perpendicular magnetic anisotropy (VCMA) on oxygen migration at Fe/MgO interfaces was revealed by performing systematic {\it ab initio} study of the energetics of the oxygen path around the…
Exploring novel strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance, not only for advancing our understanding of fundamental magnetism, but also for unlocking potential practical…
Materials with large magnetocrystalline anisotropy and strong electric field effects are highly needed to develop new types of memory devices based on electric field control of spin orientations. Instead of using modified transition metal…