Related papers: Self-Amplification-Assisted Highly Efficient Integ…
We show the first demonstration of a hybrid external cavity diode laser (ECDL) using aluminum nitride (AlN) as the wave-guiding material. Two devices are presented, a near-infrared (NIR) laser using a 850 nm diode and a red laser using a…
Integrated quantum photonics relies critically on the purity, scalability, integrability, and flexibility of a photon source to support diverse quantum functionalities on a single chip. Up to date, it remains an open challenge to realize an…
In this paper, a technique combing cascaded energy-transfer pumping (CEP) method and master-oscillator power-amplifier (MOPA) configuration is proposed for power scaling of 1.6-um-band single-frequency fiber lasers (SFFLs), where the Er3+…
Quantum photonics has rapidly advanced as a key area for developing quantum technologies by harnessing photons' inherent quantum characteristics, particularly entanglement. Generation of entangled photon pairs, known as Bell states, is…
Thin-film periodically poled lithium niobate (TF-PPLN) devices have recently gained prominence for efficient wavelength conversion processes in both classical and quantum applications. However, the patterning and poling of TF-PPLN devices…
This study presents a 3.6-cm-long erbium-doped lithium niobate waveguide amplifier enhanced by an inverse-designed on-chip reflector. Integrating the reflector at the waveguide end yielded an internal net gain of 40.5 dB, achieving a 17.3…
The integration of stimulated Raman scattering (SRS) and second order nonlinearity in non-centrosymmetric photonic microresonators presents a highly promising solution for developing on-chip coherent light sources with exceptional bandwidth…
Efficient on-chip entangled photon pair generation at telecom wavelengths is an integral aspect of emerging quantum optical technologies, particularly for quantum communication and computing. However, moving to shorter wavelengths enables…
We report the preparation of a 780.2 nm and 852.3 nm laser device based on single-pass periodically poled magnesium-oxide-doped lithium niobate (PPMgO:LN) bulk crystals and diode-laser-seeded fiber amplifiers. First, a single-frequency…
Hybrid SiN-QD microlasers coupled to a passive SiN output waveguide with 7{\mu}m diameter and record low threshold density of 27 {\mu}J cm-2 are demonstrated. A new design and unique processing scheme starting from SiN/QD/SiN stacks offer…
The ability to tailor laser light on a chip using integrated photonics has allowed for extensive control over fundamental light-matter interactions in manifold quantum systems including atoms, trapped ions, quantum dots, and defect centers.…
Integrated semiconductor mode-locked lasers have shown promise in many applications and are readily fabricated using generic InP photonic integration platforms. However, the passive waveguides offered in such platforms have relatively high…
High-flux entangled photon source is the key resource for quantum optical study and application. Here it is realized in a lithium niobate on isolator (LNOI) chip, with 2.79*10^11 Hz/mW photon pair rate and 1.53*10^9 Hz/nm/mW spectral…
We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator (SOI) waveguides. The proposed devices relax the horizontal alignment tolerances required to achieve…
The field of integrated photonics has significantly impacted numerous fields including communication, sensing, and quantum physics owing to the efficiency, speed, and compactness of its devices. However, the reliance on off-chip bulk lasers…
This article describes a high-power and narrow-linewidth laser source at 399 nm useful for cooling and trapping of ytterbium atoms. A continuous-wave titanium-sapphire laser at 798 nm is frequency doubled using a lithium triborate crystal…
We demonstrate waveguide-integrated superconducting nanowire single-photon detectors on thin-film lithium niobate (LN). Using a 250 um-long NbN superconducting nanowire lithographically defined on top of a 125 um-long LN nanowaveguide,…
The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has…
Silicon photonics, compatible with large-scale silicon manufacturing, is a disruptive photonic platform that has indicated significant implications in industry and research areas (e.g., quantum, neuromorphic computing, LiDAR). Cutting-edge…
We have characterized a semiconductor amplifier laser system which provides up to 200mW output after a single-mode optical fiber at 780nm wavelength. The system is based on a tapered semiconductor gain element, which amplifies the output of…