Related papers: Quantum Channel AlGaN/GaN/AlGaN High Electron Mobi…
A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-state related gate lag. Two high-density two-dimensional electron gas (2DEG)…
We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed 2D simulations show that threshold voltages in excess of 3 V…
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For higher power demands, the ultra-wide bandgap semiconductor…
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG)…
High Electron Mobility Transistors (HEMTs) are most suitable for harsh environments as they operate reliably under extreme conditions such as high voltages, high temperatures, radiation exposure and corrosive atmospheres. In this article,…
Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this work, we examine the transport properties of two…
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility…
We investigate the influence of AlN buffer thickness on the structural, electrical, and thermal properties of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates by metal-organic chemical vapor…
The emerging wide bandgap BAlN alloys have potentials for improved III-nitride power devices including high electron mobility transistor (HEMT). Yet few relevant studies have been carried. In this work, we have investigated the use of the…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
In this paper, we have characterized an AlGaN/GaN High Electron Mobility Transistor (HEMT) with a short gate length (Lg $\approx$ 0.15$\mu$m). We have studied the effect of short gate length on the small signal parameters, linearity…
Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high…
The potential barrier between source and gate in HEMTs and between source and channel in MOSFET controls the current output and the velocity injection of electrons in the channel [1], [2]. In non self aligned structures the electric field…
AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effect transistors, analogous to silicon-on-insulator technology.…
Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called…
Quantum anomalous Hall (QAH) insulators are characterized by vanishing longitudinal resistance and quantized Hall resistance in the absence of an external magnetic field. Among them, high-Chern-number QAH insulators offer multiple…
We report N-polar AlN-based high-electron mobility transistors (HEMTs) with a GaN channel thickness of 5.2 nm on N-polar AlN on sapphire. The threshold voltage is around -2.4 to -3.0 V with saturation currents over 240 mA/mm and on/off…
GaN high electron mobility transistors (HEMT) have gained some foothold in the power electronics industry due to wide frequency bandwidth and power handling. The material offers a wide bandgap and higher critical field strength compared to…
We report on unique features of ultra-thin GaN/AlN quantum wells and demonstrate a new field emission device for human-safe disinfection with an external quantum efficiency of 18% and superior reliability, as compared to far-UVC LEDs. We…
Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufacturing approaches, and paves the way for soft, conformal,…