Related papers: Electronic g-factor and tunable spin-orbit couplin…
Pauli spin blockade (PSB) has long been an important tool for spin read-out in double quantum dot (DQD) systems with interdot tunneling $t$. In this paper we show that the blockade is lifted if the two dots experience distinct effective…
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the…
We study the low-energy spectrum of a single hole confined in a planar Ge quantum dot (QD) within the effective-mass formalism. The QD is sandwiched between two GeSi barriers of finite potential height grown along the [001] direction. To…
We investigated the electron transport property of the InGaAs/GaAs double quantum dots, the electron g-factors of which are different from each other. We found that in a magnetic field, the resonant tunneling is suppressed even if one of…
Magneto-optical parameters of trions in novel large and symmetric InP-based quantum dots, uncommon for molecular beam epitaxy grown nanostructures, with emission in the third telecom window, are measured in Voigt and Faraday configurations…
We consider a one-dimensional spin-orbit-coupled nanowire quantum dot, driven by external electric and magnetic fields, and theoretically formulate an electric mechanism to interfere its electron orbits. Owing to the existence of spin-orbit…
Inelastic spin relaxation and spin splitting $\epsilon_{\mathrm{s}}$ in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Due to both g-factor energy dependence and spin-orbit coupling $\epsilon_{\mathrm{s}}$…
Holes in Ge/SiGe heterostructures are now a leading platform for semiconductor spin qubits, thanks to the high confinement quality, two-dimensional arrays, high tunability, and larger gate structure dimensions. One limiting factor for the…
A five-level {\Pp} model of the band structure for GaAs-type semiconductors is used to describe the spin $g^*$-factor and the cyclotron mass $m^*_c$ of conduction electrons in GaAs/Ga$_{1-x}$Al$_x$As quantum wells in an external magnetic…
We observed magnetocapacitance oscillations in InAs/GaSb quantum wells separated by a $20$\,nm AlSb middle barrier. By realizing independent ohmic contacts for electrons in InAs and holes in the GaSb layer, we found an out-of-plane…
We report measurements of spin transitions for GaAs quantum dots in the Coulomb blockade regime, and compare ground and excited state transport spectroscopy to direct measurements of the spin polarization of emitted current. Transport…
We consider low temperature transport through a lateral quantum dot asymmetrically coupled to two conducting leads, and tuned to the mixed-valence region separating two adjacent Coulomb blockade valleys with spin S=1/2 and S=1 on the dot.…
The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, as well as the ease of operation and…
We propose a novel approach to explore the properties of a quantum dot in the presence of the spin-orbit interaction and in a tilted magnetic field. The spin-orbit coupling within the quantum dot manifest itself as anti-crossing of the…
Non-charge based logic in single-hole spin of semiconductor quantum dots (QDs) can be controlled by anisotropic gate potentials providing a notion for making next generation solid-state quantum devices. In this study, we investigate the…
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain…
We perform polarization-resolved magneto-optical measurements on single InAsP quantum dots embedded in an InP nanowire. In order to determine all elements of the electron and hole $g$-factor tensors, we measure in magnetic field with…
We show that the electron and hole Lande g factors in self-assembled III-V quantum dots have a rich structure intermediate between that expected for paramagnetic atomic impurities and for bulk semiconductors. Strain, dot geometry, and…
In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit…
Spin-flips are one of the limiting factors for spin-based information processing. We demonstrate a transport approach for determining the spin-flip rates of a self-assembled InAs double quantum dot occupied by a single electron. In such…