Related papers: Doped Mott-Hubbard materials with a low quasiparti…
How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-$T_c$ cuprates, we study the…
Mott physics is at the root of a plethora of many-body quantum phenomena in quantum materials. Recently, the stacked or twisted structures of van der Waals (vdW) materials have emerged as a unique platform for realizing exotic correlated…
We study two-component fermions in optical lattices with spatially alternating on-site interactions using dynamical mean-field theory. Calculating the quasi-particle weight, double occupancy, and order parameters for each sublattice, we…
Many metallic quantum materials display anomalous transport phenomena that defy a Fermi liquid description. Here, we use numerical methods to calculate thermal and charge transport in the doped Hubbard model and observe a cross-over…
An intricate interplay between superconductivity, pseudogap and Mott transition, either bandwidth driven or doping driven, occurs in materials. Layered organic conductors and cuprates offer two prime examples. We provide a unified…
Surface effects of a doped thin film made of a strongly correlated material are investigated both in the absence and presence of a perpendicular electric field. We use an inhomogeneous Gutzwiller approximation for a single band Hubbard…
Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…
Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…
We present determinant quantum Monte Carlo simulations of the hole-doped single-band Hubbard-Holstein model on a square lattice, to investigate how quasiparticles emerge when doping a Mott insulator (MI) or a Peierls insulator (PI). The MI…
The problem of doping Mott insulators is of fundamental importance and long-standing interest in the study of strongly correlated electron systems. The advent of semiconductor based moir\'e materials opens a new ground for simulating the…
A fundamental issue of the Mott transition is how electrons behaving as single particles carrying spin and charge in a metal change into those exhibiting separated spin and charge excitations (low-energy spin excitation and high-energy…
Strong correlation effects, which are often associated to the approach to a Mott insulating state, in some cases may be observed even far from half-filling. This typically happens whenever the inter-site Coulomb repulsion induces a tendency…
Superconductivity in underdoped cuprates emerges from an unusual electronic state characterised by nodal quasiparticles and an antinodal pseudogap. The relation between this state and superconductivity is intensely studied but remains…
Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…
It has become clear in the past several years that the cuprates show many unusual properties, both in the normal and superconducting states, especially in the underdoped region. In particular, gap-like behavior is observed in magnetic…
We introduce the notion of superstructure Mottness to describe the Mott and Wigner-Mott transition in doped strongly correlated electron systems at commensurate filling fractions away from one electron per site. We show that superstructure…
We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel…
We study the doping driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron or hole driven transitions is found. The electron doped MIT at larger U is…
We investigate the effect of hole doping on the strong-coupling Hubbard model at half-filling in spatial dimensions $D\ge 1$. We start with an antiferromagnetic mean-field description of the insulating state, and show that doping creates…
Identifying the fingerprints of the Mott-Hubbard metal-insulator transition may be quite elusive in correlated metallic systems if the analysis is limited to the single particle level. However, our dynamical mean-field calculations…