Related papers: Nonvolatile spin field effect transistor based on …
Antiferromagnets have garnered significant attention due to their negligible stray field and ultrafast magnetic dynamics, which are promising for high-density and ultrafast spintronic applications. Their dual functionality as both spin…
Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing electrical switching of the polarity of the nonreciprocal…
Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties…
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in…
In the new van der Waals Kondo-lattice Fe$_3$GeTe$_2$, itinerant ferromagnetism and heavy fermionic behaviour coexist. Both the key properties of such a system namely a spin-polarized Fermi surface and a low Fermi momentum are expected to…
We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off…
Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D…
We theoretically demonstrate a gate-tunable superconducting spin valve effect (SVE) in a van der Waals (vdW) heterostructure composed of a monolayer superconductor (S) sandwiched between two ferromagnetic (F) monolayers (F/S/F). By…
Half-metallic Heusler alloy compounds with Curie temperatures above room temperature are suitable candidate electrode materials for injecting large spin-polarised charge carriers into the semiconducting barriers at the ferromagnet…
Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for non-volatile memory devices. So far, however, all the existing MFTJs have been based on perovskite-oxide heterostructures…
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin…
Ferroelectric materials hold great potential for alternative memories and computing, but several challenges need to be overcome before bringing the ideas to applications. In this context, the recently discovered link between electric…
Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and…
We have studied superconducting properties of the spin-valve thin layer heterostructures CoO$_x$/F1/Cu/F2/Cu/Pb where the ferromagnetic F1 layer was standardly made of Permalloy whereas for the F2 layer we have taken a specially prepared…
The broken inversion symmetry at the ferromagnet (FM)/heavy-metal (HM) interface leads to spin-dependent degeneracy of the energy band, forming spin-polarized surface states. As a result, the interface serves as an effective medium for…
Stacking nonpolar, monolayer materials has emerged as an effective strategy to harvest ferroelectricity in two-dimensional (2D) van de Waals (vdW) materials. At a particular stacking sequence, interlayer charge transfer allows for the…
The discovery of van der Waals (vdW) magnets opened up a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices with vdW magnets are so far limited to cryogenic…
In this communication we study the transport properties of two-dimensional assemblies of [Fe(Htrz)2(trz)](BF4) spin-crossover nanoparticles (NPs) with two different morphologies. The NPs have been synthesized made in a similar manner than…
Electric-field switching of magnetic order is of significant physical interest and holds great potential for spintronic applications. However, it has rarely been reported in two-dimensional (2D) van der Waals (vdW) magnets due to the…
In this work, the electrical and spin properties of monolayer MoSi2X4 (X= N, P, As, and Sb) under vertical strain are investigated. The band structures state that MoSi2N4 is an indirect semiconductor, whereas other compounds are direct…