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Resistive switching in amorphous silicon carbide (a-SiC) films deposited by a single composite target magnetron sputtering process is reported. Switching performance as a function of thickness of the films (50, 100 and 300 nm) as well as…

Applied Physics · Physics 2019-08-13 P. Chaitanya Akshara , Nilanjan Basu , Jayeeta Lahiri , G. Rajaram , M. Ghanashyam Krishna

The surface coating of cathodes using insulator films has proven to be a promising method for high-voltage cathode stabilization in Li-ion batteries. However, there is still substantial uncertainty about how these films function,…

We report on the observation of metallic behavior in thin films of oxygen-deficient SrTiO$_3$ - down to 9 unit cells - when coherently strained on (001) SrTiO$_3$ or DyScO$_3$-buffered (001) SrTiO$_3$ substrates. These films have carrier…

Materials Science · Physics 2016-06-06 Purnima P. Balakrishnan , Urusa S. Alaan , Matthew T. Gray , Yuri Suzuki

The present study reports on the structure formation in thin epitaxial nickel-aluminum films (Ni1-xAlx; Al atomic fraction x up to x=0.24) grown on MgO(001) substrates by magnetron sputtering. Experimental and computational data demonstrate…

Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we…

Strongly Correlated Electrons · Physics 2016-08-08 D. J. Groenendijk , N. Manca , G. Mattoni , L. Kootstra , S. Gariglio , Y. Huang , E. van Heumen , A. D. Caviglia

V$_3$Si thin films are known to be superconducting with transition temperatures up to 15 K, depending on the annealing temperature and the properties of the substrate underneath. Here we investigate the film structural properties with the…

Ferroelectric aluminum scandium nitride (Al1-xScxN, AlScN) offers CMOS-compatible integration but suffers from high coercive fields and leakage currents that hinder thickness scaling. Further reduction in thickness is essential for…

We report the growth of thin films of Sr1-xCaxRuO3 on SrTiO3 and MgO substrates by metalorganic aerosol deposition. The structure and microstructure is characterized by X-ray diffraction and room-temperature scanning tunnelling microscopy…

Strongly Correlated Electrons · Physics 2010-03-03 M. Schneider , V. Moshnyaga , P. Gegenwart

The optical properties of thin films of intermetallic Au$_{3}$Hf were experimentally investigated for the first time, which display clear plasmonic properties in the optical and near infrared region with negative permittivity. In contrast…

Materials Science · Physics 2022-01-07 Hugh Littlehailes , William R. Hendren , Robert M. Bowman , Fumin Huang

Ohmic contacts to high (>70\%) Al content n-type Al$_x$Ga$_{1-x}$N ultra-wide bandgap semiconductor layers in nitride electronic and photonic devices are typically fabricated by a lift-off process and high temperature ($>700^\circ$C)…

We study the dc resistivity of UNi2Al3 thin films as a function of temperature and magnetic field. We focus on the temperature range around the antiferromagnetic transition (TN \approx 4 K in zero applied field). From a clear signature of…

Strongly Correlated Electrons · Physics 2012-11-14 Marc Scheffler , Eva Rose , Julia P. Ostertag , Karl Schrem , Katrin Steinberg , Martin Dressel , Martin Jourdan

Thin films of the charge-ordered (CO) compound Pr$_{0.5}$Ca$_{0.5}$MnO$_{3}$ have been deposited onto (100)-oriented SrTiO$_{3}$ substrates using the Pulsed Laser Deposition technique. Magnetization and transport properties are measured…

Materials Science · Physics 2009-10-31 W. Prellier , Ch. Simon , A. M. Haghiri-Gosnet , B. Mercey , B. Raveau

Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($\epsilon_r$) values relative to AlN. $\epsilon_r$ values of ~17 to 21 for Sc contents of…

Ferroelectric switching is unambigiously demonstrated for the first time in a III-V semiconductor based material: AlScN -- A discovery which could help to satisfy the urgent demand for thin film ferroelectrics with high performance and good…

Materials Science · Physics 2019-03-27 Simon Fichtner , Niklas Wolff , Fabian Lofink , Lorenz Kienle , Bernhard Wagner

Magnetotransport properties of La0.7Ca0.3MnO3 thin films deposited on (100) LaAlO3 substrate were investigated. The balance between the charge ordered insulating phase and ferromagnetic metallic phase may account for a number of glassy…

Strongly Correlated Electrons · Physics 2009-11-11 V Markovich , E. S. Vlakhov , Y. Yuzhelevskii , B. Blagoev , K. A. Nenkov , G. Gorodetsky

We have investigated the atomically-resolved substrate and homoepitaxial thin film surfaces of SrTiO3(001) using low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) combined with pulsed laser deposition (PLD). It was found…

Materials Science · Physics 2015-05-18 Takeo Ohsawa , Katsuya Iwaya , Ryota Shimizu , Tomihiro Hashizume , Taro Hitosugi

We have investigated the electrical transport properties of 8 nm thick La0.67Ca0.33MnO3 films, sputter-deposited on SrTiO3 (STO), and etched into 5 micrometer-wide bridges by Ar-ion etching. We find that even slight overetching of the film…

Materials Science · Physics 2009-11-13 C. Beekman , I. Komissarov , M. Hesselberth , J. Aarts

We report the growth of high-quality epitaxial MgB2 thin films on (1102) Al2O3 and (001) SrTiO3 substrates by using a pulsed laser deposition technique. The thin films grown on Al2O3 substrates show a Tc of 39 K with a sharp transition…

Superconductivity · Physics 2007-05-23 W. N. Kang , Hyeong-Jin Kim , Eun-Mi Choi , C. U. Jung , Sung-Ik Lee

The crystal structure and chemical bonding of magnetron-sputtering deposited nickel carbide Ni$_{1-x}$C$_{x}$ (0.05$\leq$x$\leq$0.62) thin films have been investigated by high-resolution X-ray diffraction, transmission electron microscopy,…

Materials Science · Physics 2014-09-23 Andrej Furlan , Jun Lu , Lars Hultman , Ulf Jansson , Martin Magnuson

The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO3-based…