Related papers: Reduced sensitivity to process, voltage and temper…
Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements.…
Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We recently showed that perpendicular MTJs activated by…
Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNG) can consume orders of magnitude less energy per bit than CMOS pseudo-RNG. Here, we numerically investigate with a macrospin Landau-Lifshitz-Gilbert…
Perpendicular magnetic tunnel junctions (pMTJs) actuated by nanosecond pulses are emerging as promising devices for true random number generation (TRNG) due to their intrinsic stochastic behavior and high throughput. In this work, we study…
True random number generators are of great interest in many computing applications such as cryptography, neuromorphic systems and Monte Carlo simulations. Here we investigate perpendicular magnetic tunnel junction nanopillars (pMTJs)…
Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration…
We review two magnetic tunnel junction (MTJ) approaches for compact, low-power, CMOS-integrated true random number generation (TRNG). The first employs passive-read, easy-plane superparamagnetic MTJs (sMTJs) that generate…
We demonstrate that thermally stable perpendicular magnetic tunnel junctions (pMTJs), widely used in spin-transfer torque magnetic random-access memory, can be actuated with nanosecond pulses to exhibit tunable stochastic behavior. This…
The probability switching characteristics in spin transfer torque magnetic tunnel junctions (STT-MTJs) are simulated by considering thermal noise using a spin-circuit module. Thermal noise significantly affects the probability switching for…
Large quantities of random numbers are crucial in a wide range of applications. We have recently demonstrated that perpendicular nanopillar magnetic tunnel junctions (pMTJs) can produce true random bits when actuated with short pulses.…
High-quality random numbers are very critical to many fields such as cryptography, finance, and scientific simulation, which calls for the design of reliable true random number generators (TRNGs). Limited by entropy source, throughput,…
We investigated the low temperature performance of CoFeB/MgO based perpendicular magnetic tunnel junctions (pMTJs) by characterizing their quasi-static switching voltage, high speed pulse write error rate and endurance down to 9 K. pMTJ…
Magnetic Tunnel Junctions (MTJs) have shown great promise as hardware sources for true random number generation (TRNG) due to their intrinsic stochastic switching behavior. However, practical deployment remains challenged by drift in…
This work investigates nanosecond superparamagnetic switching in 50 nm diameter in-plane magnetized magnetic tunnel junctions (MTJs). Due to the small in-plane uniaxial anisotropy, dwell times below 10 ns and auto-correlation times down to…
Monte Carlo particle transport problems play a vital role in scientific computing, but solving them on exiting von Neumann architectures suffers from random branching and irregular memory access, causing computing inefficiency due to a…
The emerging Spin Transfer Torque Magnetic Tunnel Junction (STT-MTJ) technology exhibits interesting stochastic behavior combined with small area and low operation energy. It is, therefore, a promising technology for security applications,…
This work represents integration of MTJ with 30nm FinFET for low voltage analog write operations and readout optimization for the p-bit or true random number generator (TRNG), where the induced p-bit, the probabilistic state of the magnetic…
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy…
In recent years, true random number generators (TRNGs) based on magnetic tunnelling junction (MTJ) have become increasingly attractive. This is because MTJ-based TRNGs offer some advantages over traditional CMOS-based TRNGs, such as smaller…
Energy-efficient methods are addressed for leveraging low energy barrier nanomagnetic devices within neuromorphic architectures. Using a Magnetoresistive Random Access Memory (MRAM) probabilistic device (p-bit) as the basis of neuronal…