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Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can…
The generation of a fully valley-polarized current (FVPC) in bulk graphene is a fundamental goal in valleytronics. To this end, we investigate valley-dependent transport through a strained graphene modulated by a finite magnetic…
A nanoelectronic device made of twisted bilayer graphene (TBLG) is proposed to steer the direction of the current flow. The ballistic electron current, injected at one edge of the bottom layer, can be guided predominantly to one of the…
Propagation of an electron wave packet through a quantum point contact (QPC) defined by electrostatic gates in bilayer graphene is investigated. The gates provide a bias between the layers, in order to produce an energy gap. If the gates on…
We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling…
We study the electronic transport properties at the intersection of three topological zero-lines as the elementary current partition node that arises in minimally twisted bilayer graphene. Unlike the partition laws of two intersecting…
We report on multiterminal measurements in a ballistic bilayer graphene (BLG) channel where multiple spin and valley-degenerate quantum point contacts (QPCs) are defined by electrostatic gating. By patterning QPCs of different shapes and…
Modulation of electronic states in two-dimensional (2D) materials can be achieved by using in-plane variations of the band gap or the average potential in lateral quantum structures. In the atomic configurations with hexagonal symmetry,…
Compared to monolayer graphene, electrons in Bernal-stacked bilayer graphene (BLG) have an additional layer degree of freedom, offering a platform for developing {\it layered spintronics} with the help of proximity-induced magnetism. Based…
Twisted bilayer graphene (TBG) aligned with hexagonal boron nitride (h-BN) substrate can exhibit an anomalous Hall effect at 3/4 filling due to the spontaneous valley polarization in valley resolved moir\'e bands with opposite Chern number…
We propose a device for the generation of valley polarized electronic current in bilayer graphene. By analyzing the response of this material to intense terahertz frequency light in the presence of a transverse electric field, we…
Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to…
We investigate the electrical transport properties of the mini-valley polarized state proposed recently in slightly doped Bernal Bilayer Graphene (BLG) in large electric displacement fields. By minimizing the Hartree-Fock energy functional,…
We recently shown, using tight-binding calculations, that nonequilibrium valley polarization can be realized in graphene, when the current is injected through "valley filter": a ballistic point contact with zigzag edges. Here we…
Valley-polarized currents can be generated by local straining of multi-terminal graphene devices. The pseudo-magnetic field created by the deformation allows electrons from only one valley to transmit and a current of electrons from a…
Developing alternative paradigms of electronics beyond silicon technology requires the exploration of fundamentally new physical mechanisms, such as the valley specific phenomena in hexagonal two-dimensional materials. We realize ballistic…
Graphene has evolved as a platform for quantum transport that can compete with the best and cleanest semiconductor systems. Recently, many interesting local properties of carrier transport in graphene have been investigated by various…
The valley degree of freedom in 2D materials can be manipulated for low-dissipation quantum electronics called valleytronics. At the boundary between two regions of bilayer graphene with different atomic or electrostatic configuration,…
The existence of inequivalent valleys K and K' in the momentum space of two-dimensional hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, in analogy…
The electron transport of different conical valleys is investigated in graphene with extended line-defects. Intriguingly, the electron with a definite incident angle can be completely modulated into one conical valley by a resonator which…