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$\beta$-Ga$_2$O$_3$ is a next-generation ultra wide bandgap semiconductor (E$_g$ = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important…

Applied Physics · Physics 2020-08-05 M. Brooks Tellekamp , Karen N. Heinselman , Steve Harvey , Imran Khan , Andriy Zakutayev

Recently, a number of new two-dimensional (2D) materials based on puckered phosphorene and arsenene have been predicted with moderate band gaps, good absorption properties and carrier mobilities superior to transition metal dichalcogenides.…

Materials Science · Physics 2021-09-10 Magdalena Laurien , Himanshu Saini , Oleg Rubel

High-dielectric constant and wide band gap oxides have important technological applications. The crystalline oxide polymorphs having lattice constant compatibility to silicon are particularly desirable. One recently reported candidate is…

Materials Science · Physics 2007-05-23 C. Sevik , C. Bulutay

Even small electrostatic potentials can dramatically influence the band structure of narrow-, broken-, and inverted-gap materials. A quantitative understanding often necessitates a self-consistent Hartree approach. The valence and…

The 3D ternary Li$_2$GeO$_3$ compound, which could serve as the electrolyte material in Li+-based batteries, exhibits an unusual lattice symmetry (orthorhombic crystal), band structure, charge density distribution and density of states. The…

The two-dimensional electron gas at the LaTiO3/SrTiO3 or LaAlO3/SrTiO3 oxide interfaces becomes superconducting when the carrier density is tuned by gating. The measured resistance and superfluid density reveal an inhomogeneous…

Using the density functional theory (DFT) with the generalized gradient approximation (GGA), the structural and electronic properties of wurtzite AlN, GaN, InN, and their related alloys, Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N, were…

Materials Science · Physics 2008-11-04 E. Lopez-Apreza , J. Arriaga , D. Olguin

A theoretical study is carried out in the homometallic mixed valent ludwigite Co3O2BO3 using a modified tight binding methodology. The study focuses on the electronic properties of bulk, 1D and molecular units to describe differences…

Materials Science · Physics 2010-09-30 M. Matos

Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity…

Distinct shortcomings of individual halide perovskites for solar applications, such as restricted range of band gaps, propensity of ABX3 to decompose into AX+BX2, or oxidation of 2ABX3 into A2BX6 have led to the need to consider alloys of…

Materials Science · Physics 2018-12-31 Gustavo M. Dalpian , Xingang Zhao , Lawrence Kazmerski , Alex Zunger

The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its…

Hydrostatic pressure is a useful tool that can tune several key parameters in solid state materials. For example, the Land\'e $g$-factor in GaAs two-dimensional electron systems (2DESs) is expected to change from its bulk value…

Mesoscale and Nanoscale Physics · Physics 2021-04-20 Yoon Jang Chung , S. Yuan , Yang Liu , K. W. Baldwin , K. W. West , M. Shayegan , L. N. Pfeiffer

Search for efficient materials for application in the fields of optoelectronics and photovoltaics are active areas of research across the world. The potential of compounds such as K${_3}$Cu${_3}$P${_2}$ is not yet fully realized. Therefore,…

Materials Science · Physics 2022-03-25 Mwende Mbilo , George S. Manyali , Robinson J. Musembi

Two-dimensional conjugated metal-organic frameworks hold great promise for applications in chemiresistive sensing, electrocatalysis, and energy storage. Their interfacial interaction with metal electrodes, which has been rarely…

Materials Science · Physics 2026-03-02 Xiaoqing Yuan , Shaoze Wang , Xiaoyue He , Zhecheng Sun , Lei Sun

The structural, electronic, and optical properties of twelve multicomponent oxides with layered structure, RAMO$_4$, where R$^{3+}$=In or Sc; A$^{3+}$=Al or Ga; and M$^{2+}$=Ca, Cd, Mg, or Zn, are investigated using first-principles density…

Materials Science · Physics 2015-06-03 A. Murat , J. E. Medvedeva

We report density functional theory calculations on the crystal structure, elastic, lattice dynamics and electronic properties of iso-structural layered monoclinic alkali azides, LiN3 and NaN3. The effect of van der Waals interactions on…

Materials Science · Physics 2013-11-04 K. Ramesh Babu , G. Vaitheeswaran

The electronic structure of a LaNiO$_3$ bilayer grown along the [111] direction and confined between insulating layers of LaAlO$_3$ is theoretically investigated using a combination of first principle calculations and effective…

Strongly Correlated Electrons · Physics 2012-06-28 Andreas Rüegg , Chandrima Mitra , Alexander A. Demkov , Gregory A. Fiete

Finding novel atomically-thin heterostructures and understanding their characteristic properties are critical for developing better nanoscale optoelectronic devices. In this study, we investigate the electronic and optical properties of…

Materials Science · Physics 2016-03-23 E. Torun , H. Sahin , F. M. Peeters

Local configurational disorder can have a dominating role in the formation of macroscopic functional responses in strongly correlated materials. Here, we use entropy-stabilization synthesis to create single crystal epitaxial ABO3 perovskite…

There are a large number of atomically thin graphitic films with similar structure to graphene. These films have a spread of bandgaps relating to their ionicity, and also to the substrate on which they are grown. Such films could have a…

Mesoscale and Nanoscale Physics · Physics 2014-04-28 J. P. Hague