Related papers: Phosphides-based terahertz quantum-cascade laser
Terahertz quantum cascade lasers based on InGaAs wells and quaternary AlInGaAs barriers were measured in magnetic field. This study was carried out on a four quantum well active region design with photon energy of 14.3 meV processed both…
Terahertz quantum cascade lasers (THz QCLs) are chip-scale semiconductor lasers operating in the frequency range between 1-6 THz, useful as compact sources for spectroscopy, communications, and non-destructive imaging and testing. Here, we…
A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 ${\mu}$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon.…
We present a two-well terahertz (THz) quantum cascade laser designed for high temperature operation based on the InGaAs/AlInAs material system. The lighter effective mass and higher energy barriers increase the gain at high temperatures (T…
The development of the semiconductor quantum cascade laser (QCL) [1] has enabled bright coherent sources operating at frequencies between the optical (>100 THz) and electronic (<0.5 THz) ranges opening this frequency region for fundamental…
Room temperature operation of Terahertz Quantum Cascade Lasers (THz QCLs) has been a long-pursued goal to realize compact semiconductor THz sources. The progress toward high-temperature operation in THz QCLs has been relatively slow…
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the…
We present homogeneous quantum cascade lasers (QCLs) emitting around 3 THz which display bandwidths up to 950 GHz with a single stable beatnote. Devices are spontaneously operating in a harmonic comb state, and when in a dense mode regime…
Although most work toward the realization of group IV quantum cascade lasers (QCLs) has focused on valence-band transitions, there are many desirable properties associated with the conduction band. We show that the commonly cited…
HgCdTe-based quantum cascade lasers operating in the GaAs phonon Reststrahlen band with a target wavelength of 36 mkm are theoretically investigated using the balance equations method. The optimized active region designs, which are based on…
We report a homogeneous quantum cascade laser (QCL) emitting at Terahertz (THz) frequencies, with a total spectral emission of about 0.6 THz centered around 3.3 THz, a current density dynamic range of Jdr=1.53, and a continuous wave output…
Silicon-based quantum cascade lasers (QCLs) offer the prospect of integrating coherent THz radiation sources with silicon microelectronics. Theoretical studies have proposed a variety of n-type SiGe-based heterostructures as design…
Quantum cascade lasers (QCLs) represent a fascinating accomplishment of quantum engineering and enable the direct generation of terahertz (THz) frequency radiation from an electrically-biased semiconductor heterostructure. Their large…
Terahertz sources based on intra-cavity difference-frequency generation in mid-infrared quantum cascade lasers (THz DFG-QCLs) have recently emerged as the first monolithic electrically-pumped semiconductor sources capable of operating at…
We present GaSb-based interband cascade lasers emitting at a center wavelength of 6.12 $\mu$m at 20$^\circ$C in continuous-wave operation up to a maximum operating temperature of 40$^\circ$C. Pulsed measurements based on broad area devices…
We report gain calculations for a quantum cascade laser using a fully self-consistent quantum mechanical approach based on the theory of nonequilibrium Green functions. Both the absolute value of the gain as well as the spectral position at…
The ability to engineer quantum-cascade-lasers (QCLs) with ultrabroad gain spectra and with a full compensation of the group velocity dispersion, at Terahertz (THz) frequencies, is a fundamental need for devising monolithic and miniaturized…
A novel lasing scheme for terahertz quantum cascade lasers, based on consecutive phonon-photon-phonon emissions per module, is proposed and experimentally demonstrated. The charge transport of the proposed structure is modeled using a rate…
We at RRCAT have recently developed high power laser diodes in the wavelength range of 740 to 1000 nm. A typical semiconductor laser structure is consisted of about 10 epilayers with different composition, thickness and doping values. For…
A new tuning mechanism is demonstrated for single-mode metal-clad plasmonic lasers, in which refractive-index of the laser's surrounding medium affects the resonant-cavity mode in the same vein as refractive-index of gain medium inside the…