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Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…
The combination of magnetic symmetries and electronic band topology provides a promising route for realizing topologically nontrivial quasiparticles, and the manipulation of magnetic structures may enable the switching between topological…
Scaling of GaN high-electron-mobility transistors (HEMTs) usually increases gate leakage current and deteriorates breakdown characteristic, limiting the maximum drain current and output power density. These bottlenecks can be circumvented…
Accurate measurement of transistor parasitic capacitance and its associated energy losses is critical for evaluating device performance, particularly in high-frequency and high-efficiency power conversion systems. This paper proposes a…
Layered two-dimensional (2D) materials provide unique structural features, such as physical gaps between their layers that are only connected through van der Waals (vdW) forces. These vdW gaps can guide the migration of intercalated ions…
The search for high-temperature superconductors in hydrides under high pressure has always been a research hotspot. Hydrogen-based superconductors offer an avenue to achieve the long-sought goal of superconductivity at room temperature. We…
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the…
Transition-metal dichalcogenides open novel opportunities for the exploration of exciting new physics and devices. As a representative system, 2H-MoS$_2$ has been extensively investigated owing to its unique band structure with a large band…
Time-division multiplexing of cryogenic signals is a promising approach to reduce space requirements, shorten cooldown times, and increase the number of quantum devices measured per cooldown. We demonstrate time-division multiplexing of…
Starting from a recently proposed comprehensive theory for the high-Tc superconductivity in cuprates, we derive a general analytic expression for the planar resistivity, in the presence of an applied external magnetic field $\textbf{H}$ and…
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…
In this paper, we compare the performance of 8 PZT ceramics and one PMN-PT material for typical bending actuator applications. This includes the measurement of non-linear transverse charge coefficient at high electric field strength and…
We propose a superconducting diode device comprising a central superconducting film flanked by two wires carrying an applied DC bias, suitably chosen so as to generate different asymmetric field profiles. Through numerical simulations of…
In this theoretical study, we focus on the high-frequency response of the electrothermal NbO2-Mott threshold switch, a real-world electronic device, which has been proved to be relevant in several applications and is classified as a…
One of the biggest challenges in implementation of Quantum circuits or Photonic Integrated Circuits in general is the inability to create efficient relay devices due to small decoherence time, high delays and poor interconnections that…
Pressure-induced superconductivity and structural phase transitions in phosphorous (P) are studied by resistivity measurements under pressures up to 170 GPa and fully $ab-initio$ crystal structure and superconductivity calculations up to…
Realistic prediction of the superconducting transition temperature (Tc) for PdH is a long-standing challenge, because it depends on robust calculations of the electron and phonon band structures to obtain the electron-phonon scattering…
Altermagnets represent a novel magnetic phase with transformative potential for ultrafast spintronics, yet efficient control of their magnetic states remains challenging. We demonstrate an ultra-low-power electric-field control of…
Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…
Differential resistance measurements are conducted for point contacts (PCs) between tungsten tip approaching along the $c$ axis direction and the $ab$ plane of Sr$_{2}$RuO$_{4}$ single crystal. Three key features are found. Firstly, within…