Related papers: Valence-transition-induced changes of the electron…
We report the temperature evolution of the detailed electronic band structure in FeSe single-crystals measured by angle-resolved photoemission spectroscopy (ARPES), including the degeneracy removal of the $d_{xz}$ and $d_{yz}$ orbitals at…
We grew a 2 micron thick film of single-phase BiFeO3 on a Si (100) substrate by pulsed laser deposition with a substrate temperature of 575 oC and an oxygen partial pressure of 0.06 mbar. X ray diffraction analysis indicated that the film…
We present an angle-resolved photoemission study of a ternary phase change material, namely Ge2Sb2Te5, epitaxially grown on Si(111) in the metastable cubic phase. The observed upper bulk valence band shows a minimum at Gamma-bar being 0.3…
Band calculations for Ce compounds with the AuCu$_{3}$-type crystal structure were carried out on the basis of dynamical mean field theory (DMFT). The results of applying the calculation to CeIn$_{3}$ and CeSn$_{3}$ are presented as the…
We present the temperature and layer dependent electronic structure of a 20-layer EuS(100)-film using a combination of first-principles and model calculation, the latter based on the ferromagnetic Kondo-lattice. The calculated…
The nitrogen-vacancy (NV) center is a well utilized system for quantum technology, in particular quantum sensing and microscopy. Fully employing the NV center's capabilities for metrology requires a strong understanding of the behavior of…
Band structure calculations have been used to identify the different bands contributing to the polarisation-dependent photoemission spectra of the undoped model cuprate Sr$_2$CuO$_2$Cl$_2$ at the high-symmetry points of the CuO$_2$ plane…
Valence instability is a key ingredient of the unusual properties of f electron materials, yet a clear understanding is lacking as it involves a complex interplay between f electrons and conduc- tion states. Here we propose a unified…
We investigate the Yb valence instabilities in the strongly correlated YbPd compound using resonant X-ray emission spectroscopy as a function of pressure across the charge-order (CO) transition. At a low temperature (T = 30 K) in the CO…
The electronic band structure of GaTe has been calculated by numerical atomic orbitals density-functional theory, in the local density approximation. In addition, the valence-band dispersion along various directions of the GaTe Brillouin…
Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553…
We report quasiparticle-energy calculations of the electronic bandstructure as measured by valence-band photoemission for selected II-VI compounds and group-III-nitrides. By applying GW as perturbation to the ground state of the fictitious,…
Direct observation of temperature dependence of individual bands of semiconductors for a wide temperature region is not straightforward, in particular. However, this fundamental property is a prerequisite in understanding the…
Two-dimensional materials are an emerging class of new materials with a wide range of electrical and optical properties and potential applications. Single-layer structures of semiconducting transition metal dichalcogenides are gaining…
The rare earth metal praseodymium (Pr) transforms from the d-fcc crystal structure (Pr-III) to {$\alpha$}-U one (Pr-IV) at 20 GPa with a large volume collapse (${\rm\Delta} V/V$ = 0.16), which is associated with the valence change of the Pr…
Previous high-resolution angle-resolved photoemission (ARPES) studies of URu$_2$Si$_2$ have characterized the temperature-dependent behavior of narrow-band states close to the Fermi level ($E_\mathrm{F}$) at low photon energies near the…
A diffraction experiment using a high energy x-ray was carried out on YbInCu4. Below the Yb valence transition temperature, the splitting of Bragg peaks was detected in higher-order reflections. No superlattice reflections accompanying the…
We present a study on the modification of the electronic structure and hole-doping effect for the layered dichalcogenide WSe_2 with a multi-valley band structure, where Ta is doped on the W site along with a partial substitution of Te for…
Iron resonant valance band photoemission spectra of Sr substituted LaFe0.75Ni0.25 O3-{\delta} have been recorded across the Fe 2p - 3d absorption threshold to obtain Fe specific spectral information on the 3d projected partial density of…
We present the first wide range (2 meV$-$5.5 eV) optical conductivity of EuB$_6$ from reflectivity and ellipsometry measurements. Upon the ferromagnetic transition at T$_{c}$=15.5 K, interband transition $\sigma_{1}(\omega)$ decreases at…