Related papers: Silicon Photonic Direct-Detection Phase Retrieval …
We propose theoretically and demonstrate experimentally a coherent microwave photonic receiver operating at 35 GHz carrier frequency. The device is based on a lithium niobate or lithium tantalate optical whispering gallery mode resonator…
This paper reports on the design, fabrication, and demonstration of a silicon photonics based heterodyne interferometric imaging system. The photonic integrated circuit (PIC) can perform one-dimensional spectroscopy for unique input…
The development of versatile and novel material platforms for integrated photonics is of prime importance in the perspective of future applications of photonic integrated circuits for quantum information and sensing. Here we present a…
We discuss the key principles of artificial photosynthesis for photovoltaic energy conversion. We demonstrate these principles by examining the operation of the so-called "dye sensitized solar cell" (DSSC) - a photoelectrochemical device…
We present a conceptual framework of planar SIS mixer array receivers and the studies on the required techniques. This concept features membrane-based on-chip waveguide probes and a quasi-two-dimensional local-oscillator distribution…
In this work we propose a microwave photon detector which successfully reaches 100% efficiency with only one absorber. Our design consists of a metastable quantum circuit coupled to a semi-infinite transmission line which performs highly…
This paper presents a simple method to recover phase information from regions of unresolvable fringe density, specifically, at the camera corners, where interference fringes are not resolved by the camera using Phase Shifting Interferometry…
Material absorption is a key limitation in nanophotonic systems; however, its characterization is often obscured by scattering and diffraction loss. Here we show that nanomechanical frequency spectroscopy can be used to characterize the…
We introduce and discuss a new approach to the phase retrieval of fields radiated by continuous aperture sources having a circular support, which is of interest in many applications including the detection of shape deformations on reflector…
Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain…
Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert…
A system-on-chip (SoC) photonic-electronic linear-algebra accelerator with the features of wavelength-division-multiplexing (WDM) based broadband photodetections and high-dimensional matrix-inversion operations fabricated in advanced…
Imaging 3D nano-structures at very high resolution is crucial in a variety of scientific fields. However, due to fundamental limitations of light propagation we can only measure the object indirectly via 2D intensity measurements of the 3D…
Microwave reflectance probed photoconductivity (or $\mu$-PCD) measurement represents a contactless and non-invasive method to characterize impurity content in semiconductors. Major drawbacks of the method include a difficult separation of…
We report an on-chip integrated metal-graphene-silicon plasmonic Schottky photodetector with 85mA/W responsivity at 1.55 um and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors…
Satellite-ground quantum communication requires single-photon detectors of 850-nm wavelength with both high detection efficiency and large sensitive area. We developed superconducting nanowire single-photon detectors (SNSPDs) on…
Several types of detectors are used to detect charged particles in particle and nuclear physics experiments. Since the semiconductor detector has superior spatial and kinematic resolutions as well as good response time than other types of…
Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500-nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose.…
Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and optoelectronic applications. While experimental measurements of the phonon-assisted absorption coefficient of SiC across its indirect gap have…
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…