Related papers: Spin- and valley-dependent transports through ferr…
In this work, we investigate spin and valley transport properties of a WSe$_2$ monolayer placed on top of a ferromagnetic insulator. We are interested in controlling the transport properties by applying external potentials to the system. To…
The interplay of massive electrons with spin-orbit coupling in bulk graphene results in a spin-valley dependent gap. Thus, a barrier with such properties can act as a filter, transmitting only opposite spins from opposite valleys. In this…
We study the spin-resolved transport through magnetic nanostructures in monolayer and bilayer graphene. We take into account both the orbital effect of the inhomogeneous perpendicular magnetic field as well as the in-plane spin splitting…
The polymorph of ${\rm 8-Pmmn}$ borophene is an anisotropic Dirac material with tilted Dirac cones at two valleys. The tilting of the Dirac cones at two valleys are in opposite direction, which manifests itself via valley dependent Landau…
We study spin dependent transport through a magnetic bilayer graphene nanojunction configured as two dimensional normal/ferromagnetic/normal structure where the gate-voltage is applied on the layers of ferromagnetic graphene. Based on the…
Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within…
We investigate charge, valley, and spin transports in normal/ferromagnetic/normal silicene junc- tion. We show that the charge, valley, and spin conductances in this junction oscillate with the length of the ferromagnetic silicene. It is…
It is shown that potential barriers in bilayer graphene (BLG) and monolayer transition metal dichalcogenides (TMDs) can split a valley unpolarized incident current into reflected and transmitted currents with opposite valley polarization.…
We propose a valley- and spin-filter based on a normal/ferromagnetic/normal molybdenum disulfide (MoS$_2$) junction where the polarizations of the valley and the spin can be inverted by reversing the direction of the exchange field in the…
Valleytronics using two-dimensional materials opens unprecedented opportunities for information processing with the valley polarizer being a basic building block. Paradigms such as strain engineering, the inclusion of line defects, and the…
We study spin and valley transports in junctions composed of silicene and topological crystalline insulators. We consider normal/magnetic/normal Dirac metal junctions where a gate electrode is attached to the magnetic region. In…
We propose a highly efficient silicene device for dual spin and valley filtering. The device consists of two different barrier regions: the first is a region under uniaxial strain, with an exchange field induced by adjacent top and bottom…
Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
We study electron transport in monolayer molybdenum disulfide MoS$_2$ subjected to a magnetic barrier. Our analysis employs a full-band continuum model to capture the relevant physical phenomena. We focus on how electron energy, magnetic…
We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a $98\%$) with voltage-controlled spin polarization operating at room temperature and with small operating voltage ($0.3$ V). The…
We present a single barrier system to generate pure valley-polarized current in monolayer graphene. A uniaxial strain is applied within the barrier region, which is delineated by localized magnetic field created by ferromagnetic stripes at…
Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the…
Monolayer graphene with an energy gap presents a pseudospin symmetry broken ferromagnet with a perpendicular pseudomagnetization whose direction is switched by altering the type of doping between n and p. We demonstrate an electrical…
Spin-valley transport and magnetoresistance are investigated in silicene-based N/TB/N/TB/N junction where N and TB are normal silicene and topological barriers. The topological phase transitions in TB's are controlled by electric, exchange…