Related papers: Dual mechanisms for transient capacitance anomaly …
Negative capacitance at the low-frequency domain and inverted hysteresis are familiar features in perovskite solar cells, where the origin is still under discussion. Here we use Impedance Spectroscopy to analyse these responses in…
We report the prediction and observation of supra-binary ferroelectricity in a ferroelectric nanowire (FNW) covered with a semi-cylindrical gate that provides an anisotropic electric field in the FNW. There are gate-voltage-driven…
We have reported on the hysteresis and training effect of spin current in Pt/Y3Fe5O12 heterostructures during subsequent cycles of ionic liquid gate voltage Vg. The inverse spin Hall effect voltage in spin pumping and spin Hall…
Hybrid Improper Ferroelectricity (HIF) allows the generation of an electrical polarization in the AA'BB'O$_6$ double perovskite materials thanks to the combination of two non-polar octahedral distortions. Nevertheless, for selected…
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van…
The switching behavior of antiferroelectric domain structures under the applied electric field is not fully understood. In this work, by using the phase field simulation, we have studied the polarization switching property of…
We report that the irreversible magnetization switching process in ferromagnetic nanoparticles is governed by the formation and dynamics of topological point-defects in the form of hedgehog-antihedgehog pairs. After nucleation, these pairs…
Magnetoelectric coupling in multiferroic heterostructures can produce large lateral modulations of magnetic anisotropy enabling the imprinting of ferroelectric domains into ferromagnetic films. Exchange and magnetostatic interactions within…
Magnetization reversal in ferro- and ferrimagnets is a well-known archetype of non-equilibrium processes, where the volume fractions of the oppositely magnetized domains vary and perfectly compensate each other at the coercive magnetic…
The nanoscopic characterization of ferroelectric thin films is crucial from their device application point of view. Standard characterization techniques are based on detecting the nanoscopic charge compensation current (switching current)…
In this paper, the multi-domain nature of ferroelectric (FE) polarization switching dynamics in a metal-ferroelectric-metal (MFM) capacitor is explored through a physics-based phase field approach, where the three-dimensional time-dependent…
The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important…
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…
We study a high-TC superconducting (YBa2Cu3O7-d) / ferromagnetic (Co/Pt multilayer) hybrid which exhibits resistance switching driven by the magnetic history: depending on the direction of the external field, a pronounced decrease or…
In this paper I discuss the electronic structure and properties of a specific, rather unconventional class of transition metal (TM) compounds, e.g. TM oxides, which formally have unusually high values of the oxidation state, or valence, of…
Perovskite solid solutions PbHfO3-PbSnO3 offer valuable opportunities for studying the formation mechsnisms of incommensurate phases, owing to the presence of an intermediate (between cubic and incommensurate) phase, which is stabilized in…
We study a two-dimensional fermionic cloud of repulsive alkali-metal atoms characterized by two hyperfine states which are Rabi coupled. Within a variational Hartree-Fock scheme, we calculate analytically the ground-state energy of the…
Integrating ferroelectricity, antiferromagnetism, and topological quantum transport within a single material is rare, but crucial for developing next-generation quantum devices. Here, we propose a multiferroic heterostructure consisting of…
A stochastic model of electric field-driven polarization reversal in orthorhombic ferroelectrics is advanced, providing a description of their temporal electromechanical response. The theory accounts for all possible parallel and sequential…
We report on the electric-field-induced reversible metal-insulator transition (MIT) of the insulating LaAlO3 thin films observed in metal/LaAlO3/Nb-SrTiO3 heterostructures. The switching voltage depends strongly on the thickness of the…