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The positively charged nitrogen vacancy (NV+) centre in diamond has been traditionally treated as a dark state due to the experimental lack of an optical signature. Recent computational studies have shown that it is possible for the NV+…

Mesoscale and Nanoscale Physics · Physics 2022-01-05 Akib Karim , Igor Lyskov , Salvy P. Russo , Alberto Peruzzo

The coherent behavior of the single electron and single nuclear spins of a defect center in diamond and a 13C nucleus in its vicinity, respectively, are investigated. The energy levels associated with the hyperfine coupling of the electron…

Quantum Physics · Physics 2009-11-10 I. Popa , T. Gaebel , M. Domhan , C. Wittmann , F. Jelezko , J. Wrachtrup

Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realizing precise single-defect positioning and activation, which is crucial for scalable…

We created dense ensembles of negatively charged nitrogen-vacancy (NV-) centers in diamond by neutron and electron irradiation for applications in hybrid quantum systems and magnetometry. We characterize fluorescence intensity, optical and…

The germanium vacancy in diamond (GeV) is a promising candidate for color center based quantum networking. Yet, like for other group-IV vacancy defects in diamond, achieving fast, high-fidelity qubit operations using traditional magnetic…

Mesoscale and Nanoscale Physics · Physics 2025-07-28 C. Adambukulam , J. A. Scott , S. Q. Lim , I. Aharonovich , A. Morello , A. Laucht

Solid state quantum emitters, in particular group-IV vacancy centers in diamond, are at the forefront of research in quantum technologies due to their unique optical and spin properties. Reduction of the diamond host size to the nanoscale…

We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribute to substitutional silicon in diamond, and identify a…

Nanodiamonds (NDs) hosting optically active defects are an important technical material for applications in quantum sensing, biological imaging, and quantum optics. The negatively charged silicon vacancy (SiV) defect is known to fluoresce…

The nitrogen-vacancy (NV) center in diamond is a heavily studied defect due to its potential applications to quantum metrology and computation, particularly in ambient conditions. The key mechanism to using the NV in any application lies in…

Quantum Physics · Physics 2023-05-03 Liam Hanlon , Michael Olney-Fraser , Lukas Razinkovas , Marcus W. Dohert

There is a continuous search for solid-state spin qubits operating at room temperature with excitation in the IR communication bandwidth. Recently we have introduced the photoelectric detection of magnetic resonance (PDMR) to read the…

Materials Science · Physics 2018-06-20 E. Londero , E. Bourgeois , M. Nesladek , A. Gali

The nitrogen-vacancy (NV) centers (NCVSi) - in 4H silicon carbide (SiC) constitute an ensemble of spin S = 1 solid state qubits interacting with the surrounding 14N and 29Si nuclei. As quantum applications based on a polarization transfer…

Long distance quantum networking requires combining efficient spin-photon interfaces with long-lived local memories. Group-IV color centers in diamond (SiV, GeV, and SnV) are promising candidates for this application, containing an…

A magneto-optical study of the 1.4 eV Ni color center in boron-free synthetic diamond, grown at high pressure and high temperature, has been performed in magnetic fields up to 56 T. The data is interpreted using the effective spin…

Mesoscale and Nanoscale Physics · Physics 2015-06-04 P. Plochocka , O. Portugall , P. Y. Solane , E. Gheeraert , L. Ranno , E. Bustarret , N. Bruyant , I. Breslavetz , D. K. Maude , H. Kanda , G. L. J. A. Rikken

Point defects are responsible for a wide range of optoelectronic properties in materials, making it crucial to engineer their concentrations for novel materials design. However, considering the plethora of defects in co-doped semiconducting…

Control over the charge states of color centers in solids is necessary in order to fully utilize them in quantum technologies. However, the microscopic charge dynamics of deep defects in wide-bandgap semiconductors are complex, and much…

Mesoscale and Nanoscale Physics · Physics 2021-09-08 A. Gardill , I. Kemeny , M. C. Cambria , Y. Li , H. T. Dinani , A. Norambuena , J. R. Maze , V. Lordi , S. Kolkowitz

Group-IV color centers in diamond have attracted significant attention as solid-state spin qubits because of their excellent optical and spin properties. Among these color centers, the tin-vacancy (SnV$^{\,\textrm{-}}$) center is of…

We determine and analyze the charge and spin density distributions of nitrogen-vacancy (N-V) center in diamond for both the ground and excited states by \emph{ab initio} supercell calculations. We show that the hyperfine tensor of $^{15}$N…

Materials Science · Physics 2009-05-11 Adam Gali

Different types of concave plasmonic nanoresonators have been optimized to achieve superradiantly enhanced emission of SiV color centers in diamond. Comparative study has been performed to consider advantages of different N number of SiV…

The negatively charged nitrogen-vacancy center in diamond is a prototype photoluminescent point defect spin qubit with promising quantum technology applications, enabled by its efficient optical spin polarization and readout. Its low-lying…

Point defects in semiconductors are becoming central to quantum technologies. They can be used as spin qubits interfacing with photons, which are fundamental for building quantum networks. Currently, the most prominent quantum defect in…

Materials Science · Physics 2025-04-17 Yihuang Xiong , Yizhi Zhu , Shay McBride , Sinéad M. Griffin , Geoffroy Hautier