Related papers: Terahertz-Frequency Plasmonic-Crystal Instability …
We developed a theory of collective plasma oscillations in a dc current-biased field effect transistor with interdigitated dual grating gate and demonstrated a new mechanism of electron plasma instability in this structure. The instability…
We study instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equation. With only the acoustic-phonon-limited electron…
Graphene devices are known to have the potential to operate THz signals. In particular, graphene field-effect transistors have been proposed as devices to host plasmonic instabilities in the THz realm; for instance, Dyakonov-Shur…
Understanding of fundamental physics of plasmonic instabilities is the key issue for the design of a new generation of compact electronic devices required for numerous THz applications. Variable width plasmonic devices have emerged as…
We identify a possible mechanism of the plasmon instabilities in periodically gated two-dimensional electron systems with a modulated electron density (plasmonic crystals) under direct current. The instability occurs due to the amplified…
We study transmission of the terahertz radiation through a two-dimensional electron gas with a concentration controlled by grating gate electrodes. Voltage applied to these electrodes creates a lateral plasmonic crystal with a gate-tunable…
We measured a change in the current transport of an antenna-coupled, multi-gate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the…
We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is associated with the Coulomb drag of the quasi-equilibrium…
We developed a hydrodynamic model of plasmonic crystals formed in the current-driven grating gate transistor structures. The model demonstrates that the quality factor of plasmonic resonances could be increased by using ungated regions with…
We present a novel approach to enhance THz nonlinearity by the resonant excitation of two-dimensional plasmons in grating-gate plasmonic crystals. Using a high-electric-field THz pump-THz probe technique, we investigate the nonlinear…
We present a comprehensive theory of the Dyakonov-Shur (DS) plasma instability in current-biased graphene transistors. Using the hydrodynamic approach, we derive equations describing the DS instability in the two-dimensional electron fluid…
We present an extensive study of resonant two-dimensional (2D) plasmon excitations in grating-gated quantum well heterostructures, which enable an electrical control of periodic charge carrier density profile. Our study combines theoretical…
A new approach of using distributed transmission line analogy for solving transport equations for ballistic nanostructures is applied for solving the three dimensional problem of the electron transport in gated ballistic nanostructures with…
Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic response mode is…
We theoretically investigate dispersion of plasma waves propagating in a lateral plasmonic crystal based on a two-dimensional electron system with grating gates. Two specific configurations are analyzed: a system with single grating gate…
We analyze the operation of the graphene n+-i-n-n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region. The momentum transfer of the injected ballistic electrons could lead…
We propose a new energy conversion approach from a dc electric field to a terahertz wave based on hybrid semiconductors by combining two-dimensional (2D) crystalline layers and a thick conducting material with possible applications as a…
It was shown previously that the current-carrying state of a Field Effect Transistor with asymmetric source and drain boundary conditions may become unstable against spontaneous generation of plasma waves [1]. By extending the analysis to…
We introduce and theoretically study the plasmon-photogalvanic effect in the planar noncentrosymmetric plasmonic crystal containing a homogeneous two-dimensional electron system gated by a periodic metal grating with an asymmetric unit…
We show that plasma excitations in nanoscale field-effect transistor structures with periodic alternation of gated and ungated regions (plasmonic crystals) differ fundamentally from conventional plasmons in isolated gated or ungated…