Related papers: Electrostatic tuning of bilayer graphene edge mode…
We investigate the electronic transport properties of unbiased and biased bilayer graphene nanoribbon in n-p and n-n junctions subject to a perpendicular magnetic field. Using the non-equilibrium Green's function method and the…
We address the optical conductivity of undoped bilayer graphene in the presence of a finite bias voltage at finite temperature. The effects of gap parameter and stacking type on optical conductivity are discussed in the context of tight…
Using the tight-binding model, we report a gap opening in the energy spectrum of the twisted bilayer graphene under the application of pressure, that can be further amplified by the presence of a perpendicular bias voltage. The valley edges…
Anderson impurity problem is considered for a graphene bilayer subject to a gap-opening bias. In-gap localized states are produced even when the impurity level overlaps with the continuum of band electrons. The effect depends strongly on…
The line shape of the double-resonant $2D$ Raman mode in bilayer graphene is often considered to be characteristic for a certain laser excitation energy. Here, in a joint experimental and theoretical study, we analyze the dependence of the…
On the basis of tight-binding lattice model, the edge states of monolayer and bilayer graphene nanoribbons (GNRs) with different edge terminations are studied. The effects of edge-hopping modulation, spin-orbital coupling (SOC), and bias…
Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod…
Bilayer graphene (BLG) possesses a finite bandgap when a potential difference is introduced between the two graphene layers. The potential difference is known to be introduced by surface charge transfer. Thus, it is expected that a finite…
We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…
Recent experiments show how a bilayer graphene twisted around a certain magic angle becomes superconducting as it is doped into a region with approximate flat bands. We investigate the mean-field $s$-wave superconducting state in such a…
Rotated graphene bilayers form an exotic class of nanomaterials with fascinating electronic properties governed by the rotation angle theta. For large rotation angles, the electron eigenstates are restricted to one layer and the bilayer…
Bilayer graphene has drawn significant attention due to the opening of a band gap in its low energy electronic spectrum, which offers a promising route to electronic applications. The gap can be either tunable through an external electric…
We investigate the topological phase transitions in graphene under the modulation of circularly polarized light, by analyzing the changes of edge states and its topological structures. A full phase diagram, with up to ten different…
The conductance, the transmission and the reflection probabilities through rectangular potential barriers and pn-junctions are obtained for bilayer graphene taking into account the four bands of the energy spectrum. We have evaluated the…
Recent introduction of superlattice potentials has opened new avenues for engineering tunable electronic band structures featuring topologically nontrivial moir\'{e}-like bands. Here we consider optoelectronic properties of Bernal-stacked…
We probe quantum Hall effect in a tunable 1-D lateral superlattice (SL) in graphene created using electrostatic gates. Lack of equilibration is observed along edge states formed by electrostatic gates inside the superlattice. We create…
An anti-phase boundary is formed by shifting a portion of photonic crystal lattice along the direction of periodicity. A spinning magnetic dipole is applied to excite edge modes on the anti-phase boundary. We show the unidirectional…
Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…
We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 -…
The interlayer energy of the twisting bilayer graphene is investigated by the molecular mechanics method using both the registry-dependent potential and the Lennard-Jones potential. Both potentials show that the interlayer energy is…