Related papers: The Study of Optical Properties for Ordered and Di…
We calculate the resistance and mean free path in long metallic and semiconducting silicon nanowires (SiNWs) using two different numerical approaches: A real space Kubo method and a recursive Green's function method. We compare the two…
A better understanding of the optical properties of a device structure characterized by a random arrangement of materials with different dielectric properties at a length scale comparable to the wavelength of light is crucial for the…
Halide perovskites perform remarkably in optoelectronic devices including tandem photovoltaics. However, this exceptional performance is striking given that perovskites exhibit deep charge carrier traps and spatial compositional and…
Boundary scattering in hierarchically disordered nanomaterials is an effective way to reduce the thermal conductivity of thermoelectric materials and increase their performance. In this work we investigate thermal transport in silicon based…
We report the growth of Si nanostructures, either as thin films or nanoparticles, on graphene substrates. The Si nanostructures are shown to be single crystalline, air stable and oxidation resistive, as indicated by the observation of a…
InN nanowires were grown on Si<111> and Si<100> substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budget limitation imposed by Back-End-Of-Line processing.…
Freeform nanostructures have the potential to support complex resonances and their interactions, which are crucial for achieving desired spectral responses. However, the design optimization of such structures is nontrivial and…
Using a random array of coupled metallic nanowires as a generic example of disordered plasmonic systems, we demonstrate that the structural disorder induces localization of light in these nanostructures at a deep-subwavelength scale. The ab…
Nanotubes of various kinds have been prepared in the last decade, starting from the discovery of carbon nanotubes. Recently other types of nanotubes including metallic (Au), inorganic (TiO2, HfS2, V7O16, CdSe, MoS2), and polymeric…
Core-shell nanowires made of Si and Ge can be grown experimentally with excellent control for different sizes of both core and shell. We have studied the structural properties of Si/Ge and Ge/Si core-shell nanowires aligned along the…
Hyperuniform disordered photonic materials have recently been shown to display large, complete photonic band gaps and isotropic optical properties, and are emerging as strong candidates for a plethora of optoelectronic applications, making…
Moderate amount of bending strains, ~3% are enough to induce the semiconductor-metal transition in Si nanowires of ~4nm diameter. The influence of bending on silicon nanowires of 1 nm to 4.3 nm diameter is investigated using molecular…
We develop a multiple scattering theory for the absorption of waves in disordered media. Based on a general expression of the average absorbed power, we discuss the possibility to maximize absorption by using structural correlations of…
The critical effect of disorder on the two-dimensional (2D) surface superconductor Si(111)-($\sqrt{7}\times\sqrt{3}$)-In is clarified by comparing two regions with different degrees of disorder. Low-temperature scanning tunneling microscopy…
Light scattering in disordered media has been studied extensively due to its prevalence in natural and artificial systems [1]. In the field of photonics most of the research has focused on understanding and mitigating the effects of…
We compare, through first-principles pseudopotential calculations, the structural, electronic and optical properties of different size silicon nanoclusters embedded in a SiO2 crystalline or amorphous matrix, with that of free-standing,…
Using Time Independent Density Functional Theory (TIDFT) it is shown that the 2nd order optical susceptibilities of narrow (1nm-2nm) Silicon Nanowires (SiNW) are enhanced due to surface termination. The value of $\chi^{(2)}$ is enhanced up…
Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. They present interesting features like compatibility with silicon substrates,…
We investigated the relative stability of the amorphous vs crystalline nanoparticles of size ranging between 0.8 and 1.8 nm. We found that, at variance from bulk systems, at low T small nanoparticles are amorphous and they undergo to an…
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin-orbit-coupled (SO) atomistic tight-binding model coupled to…