Related papers: Silicon charge pump operation limit above and belo…
Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing.…
Coulomb blockade thermometers (CBTs) are versatile and, in principle, primary thermometers operating down to the micro-Kelvin range but bias heating spoils the thermometry and the primary mode. Here, we introduce a method to extract the CBT…
Recent developments of the AC-calorimetric technique adapted for the needs of high pressure experiments are discussed. A semi-quantitative measurement of the specific heat with a Bridgman-type of pressure cell as well as a diamond anvil…
Silicon Photomultipliers (SiPM) represent a promising alternative to classical photomultipliers, for instance, for the detection of photons in high energy physics and medical physics. In the present work, electrical characterizations of…
A macroscopic fluid pump works according to the law of Newtonian mechanics and transfers a large number of molecules per cycle (of the order of 10^23). By contrast, a nano-scale charge pump can be thought as the ultimate miniaturization of…
The Coulomb Blockade Thermometer (CBT) is a primary thermometer for cryogenic temperatures, with demonstrated operation from below 1 mK up to 60 K. Its performance as a primary thermometer has been verified at temperatures from 20 mK to 200…
This manuscript reports a semiconductor-sensitized thermal cell (STC) that converts ambient heat into electrical power while simultaneously reducing its own temperature under isothermal conditions. Using a printable…
Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on…
Silicon trackers at the SLHC will suffer high radiation damage from particles produced during the collisions, which leads to high leakage currents. Reducing these currents in the sensors requires efficient cooling to -30 C. The large heat…
Efficient heat management at cryogenic temperatures is crucial for superconducting quantum technologies. This study demonstrates the controlled manipulation of the heat flow and heat rectification through an asymmetric superconducting…
We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$\Omega$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of…
Cryogenic applications in high-energy physics (HEP) demand reliable, low-power CMOS electronics capable of operating at liquid nitrogen temperatures (77 K). The open-source SkyWater 130nm (SKY130) CMOS process has previously been shown to…
We have measured individual tunneling events and Coulomb step shapes in single-electron boxes with opaque superconductor-normal metal tunnel junctions. We observe anomalous broadening of the Coulomb step with decreasing temperature in a…
Semiconductor integrated circuits operated at cryogenic temperature will play an essential role in quantum computing architectures. These can offer equivalent or superior performance to their room-temperature counterparts while enabling a…
In the field of high-energy particle detection, detectors operating in high-radiation environments primarily face high costs associated with power consumption and cooling systems. Therefore, the development of particle detectors capable of…
The energy dependent thermoelectric response of a single molecule contains valuable information about its transmission function and its excited states. However, measuring it requires devices that can efficiently heat up one side of the…
We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the…
We calculate the linear-response conductance of a metallic single-electron pump using the path-integral Monte Carlo (PIMC) method. The Coulomb oscillations of the conductance are calculated to illustrate the influence of the Coulomb…
We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…