Related papers: Low disorder and high valley splitting in silicon
The orbital, spin and valley degrees of freedom in silicon quantum dots support many modes of spin qubit operation. However, it is generally challenging to obtain information about the energy level spectrum over large ranges of parameter…
Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99:9%. However, these micromagnets also apply stray magnetic field gradients…
Molecular electronics on silicon has distinct advantages over its metallic counterpart. We describe a theoretical formalism for transport through semiconductor-molecule heterostructures, combining a semi-empirical treatment of the bulk…
Electron shuttling is emerging as a key mechanism for enabling long-range coupling in scalable spin-qubit architectures. Bringing shuttling waveform generation into the cryostat can improve scalability, but imposes strict area and power…
Disordered superconducting materials with high kinetic inductance are an important resource to generate nonlinearity in quantum circuits and create high-impedance environments. In thin films fabricated from these materials, the combination…
For two-dimensional single-valley quadratic band crossing systems with weak repulsive electron-electron interactions, we show that upon introducing a chemical potential, particle-hole order is suppressed and superconductivity becomes the…
We report the carrier densities at the surface of single-crystal quantum wells as a function of material, orientation and well width. We include wells constructed from silicon, gallium arsenide and indium arsenide with three crystal…
Quantum sensing and computation can be realized with superconducting microwave circuits. Qubits are engineered quantum systems of capacitors and inductors with non-linear Josephson junctions. They operate in the single-excitation quantum…
Solid-state qubits are sensitive to their microscopic environment, causing the qubit properties to fluctuate on a wide range of timescales. The sub-Hz end of the spectrum is usually dealt with by repeated background calibrations, which…
Using a large-N approach, we study the effect of disorder in the Kondo-screened phase of heavy-fermion materials. We demonstrate that the strong feedback between the hybridization and the conduction electron charge density magnifies the…
We study the effect of the electron-phonon coupling on vibrational eigenmodes of nano- and micro-mechanical systems made of semiconductors with equivalent energy valleys. We show that the coupling can lead to a strong mode nonlinearity. The…
Self-assembled quantum dot (QD) solids are a highly tunable class of materials with a wide range of applications in solid-state electronics and optoelectronic devices. In this perspective, we highlight how the presence of microscopic…
In this study, the quantum state depression (QSD) in semiconductor quantum well (QW) is investigated. The QSD emerge from the ridged geometry of the QW boundary. Ridges impose additional boundary conditions on the electron wave function and…
Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could…
We study the thermodynamic condensation of microcavity polaritons using a realistic model of disorder in semiconductor quantum wells. This approach correctly describes the polariton inhomogeneous broadening in the low density limit, and…
The authors investigate the magnetic field dependence of the energy splitting between low-lying valley states for electrons in a Si/SiGe quantum well tilted with respect to the crystallographic axis. The presence of atomic steps at the…
To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation…
The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most…
I present a theory of electron dynamics in semiconductors with slowly varying composition. I show that the frequency-dependent conductivity, required for the description of transport and optical properties, can be obtained from a knowledge…
Spins based in silicon provide one of the most promising architectures for quantum computing. Quantum dots are an inherently scalable technology. Here, we combine these two concepts into a workable design for a silicon-germanium quantum…