Related papers: Scalable and Configurable Tracking for Any Rowhamm…

In the past decade, many vulnerabilities were discovered in microarchitectures which yielded attack vectors and motivated the study of countermeasures. Further, architectural and physical imperfections in DRAMs led to the discovery of…

Spin-Transfer Torque RAM (STTRAM) is promising for cache applications. However, it brings new data security issues that were absent in volatile memory counterparts such as Static RAM (SRAM) and embedded Dynamic RAM (eDRAM). This is…

This dissertation rigorously characterizes many modern commodity DRAM devices and shows that by exploiting DRAM access timing margins within manufacturer-recommended DRAM timing specifications, we can significantly improve system…

Rowhammer is a well-studied DRAM phenomenon wherein multiple activations to a given row can cause bit flips in adjacent rows. Many mitigation techniques have been introduced to address Rowhammer, with some support being incorporated into…

DRAM cells are susceptible to Data-Disturbance Errors (DDE), which can be exploited by an attacker to compromise system security. Rowhammer is a well-known DDE vulnerability that occurs when a row is repeatedly activated. Rowhammer can be…

Cloud providers are concerned that Rowhammer poses a potentially critical threat to their servers, yet today they lack a systematic way to test whether the DRAM used in their servers is vulnerable to Rowhammer attacks. This paper presents…

Since its public introduction in the mid-2010s, the Row Hammer (RH) phenomenon has drawn significant attention from the research community due to its security implications. Although many RH-protection schemes have been proposed by processor…

DRAM scaling has exacerbated the RowHammer vulnerability. To counter this, JEDEC recently introduced Per Row Activation Counting (PRAC) with the Alert Back-Off protocol as an optional DDR5 feature. While promising, PRAC requires per-row…

The RowHammer vulnerability in DRAM is a critical threat to system security. To protect against RowHammer, vendors commit to security-through-obscurity: modern DRAM chips rely on undocumented, proprietary, on-die mitigations, commonly known…

As process technology scales down to smaller dimensions, DRAM chips become more vulnerable to disturbance, a phenomenon in which different DRAM cells interfere with each other's operation. For the first time in academic literature, our ISCA…

As DRAM density increases, Rowhammer becomes more severe due to heightened charge leakage, reducing the number of activations needed to induce bit flips. The DDR5 standard addresses this threat with in-DRAM per-row activation counters…

JEDEC has introduced the Per Row Activation Counting (PRAC) framework for DDR5 and future DRAMs to enable precise counting of DRAM row activations. PRAC enables a holistic mitigation of Rowhammer attacks even at ultra-low Rowhammer…

This paper provides the fundamental mechanisms of two types of row activation-induced bit flips and proposes in-DRAM protection techniques. RowBleed occurs when a victim row experiences charge leakage due to transistor's threshold voltage…

We provide an overview of recent developments and future directions in the RowHammer vulnerability that plagues modern DRAM (Dynamic Random Memory Access) chips, which are used in almost all computing systems as main memory. RowHammer is…

As memory scales down to smaller technology nodes, new failure mechanisms emerge that threaten its correct operation. If such failure mechanisms are not anticipated and corrected, they can not only degrade system reliability and…

This retrospective paper describes the RowHammer problem in Dynamic Random Access Memory (DRAM), which was initially introduced by Kim et al. at the ISCA 2014 conference~\cite{rowhammer-isca2014}. RowHammer is a prime (and perhaps the…

This paper investigates hardware-based memory compression designs to increase the memory bandwidth. When lines are compressible, the hardware can store multiple lines in a single memory location, and retrieve all these lines in a single…

RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating and precharging a DRAM row, and thus alternating the voltage of a row's wordline between low and high voltage levels, can cause bit flips in physically nearby…

Modern DRAM chips are subject to read disturbance errors. State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance threshold (RDT) (e.g., the number of aggressor row activations…

Traversing terrains with sparse footholds like legged animals presents a promising yet challenging task for quadruped robots, as it requires precise environmental perception and agile control to secure safe foot placement while maintaining…