Related papers: Spin exchange dynamics in 4H SiC monocrystals with…
Inter-valley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighbouring phosphorus donor electron states in silicon \cite{Koiller02,Koiller02A}. These same…
Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen vacancy centers in diamond, an alternative strategy seeks to identify new spin…
Hyperpolarisation at room temperature is one of the most important research fields in order to improve liquid, gas or nanoparticle tracer for Magnetic Resonance Imaging (MRI) in medical applications. In this paper we utilize nuclear…
The magnetic order, spin dynamics, and crystal structure of the multiferroic Sr0.56Ba0.44MnO3 have been investigated using neutron and x-ray scattering. Ferroelectricity develops at TC=305 K with a polarization of 4.2 microC/cm2 associated…
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions,…
A Dirac quantum spin liquid hosts Dirac spinons, which are low-energy fractionalized neutral quasiparticles with spin 1/2 that obey the Dirac equation. Recent inelastic neutron scattering studies have revealed a cone spin continuum in…
ESR studies at 9.27, 95.4, and 289.7 GHz have been performed on (C$_5$H$_{12}$N)$_2$CuBr$_4$ down to 3.7 K. The 9.27 GHz data were acquired with a single crystal and do not indicate the presence of any structural transitions. The high…
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…
We present spin noise (SN) measurements on an ensemble of donor-bound electrons in ultrapure GaAs:Si covering temporal dynamics over six orders of magnitude from milliseconds to nanoseconds. The SN spectra detected at the donor-bound…
Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses…
A theory of electron spin relaxation in semiconducting carbon nanotubes is developed based on the hyperfine interaction with disordered nuclei spins I=1/2 of $^{13}$C isotopes. It is shown that strong radial confinement of electrons…
We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley…
High-spin defect centers in crystal matrices are used in quantum computing technologies, highly sensitive sensors, and single-photon sources. In this work, optically active nitrogen-vacancy color centers NV in a 28Si-enriched (nuclear spin…
Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…
We report spin-polarized inelastic neutron scattering of the dynamical structure factor of the conical magnetic helix in the cubic chiral magnet MnSi. We find that the spectral weight of spin-flip scattering processes is concentrated on…
Neutron scattering from high-quality YBa2Cu3O6.33 (YBCO6.33) single crystals with a Tc of 8.4 K shows no evidence of a coexistence of superconductivity with long-range antiferromagnetic order at this very low, near-critical doping of…
The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium…
Recent experimental efforts have led to considerable interest in donor-based localized electron spins in Si as viable qubits for a scalable silicon quantum computer. With the use of isotopically purified $^{28}$Si and the realization of…
We present an analysis of electron transport through two weakly coupled precision placed phosphorus donors in silicon. In particular, we examine the (1,1) to (0,2) charge transition where we predict a new type of current blockade driven…
The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab-initio…