Related papers: Long distance electron-electron scattering detecte…
We experimentally investigate the temperature (T) dependence of the resistance of a classical ballistic point contact (PC) in a two-dimensional electron system (2DES). The split-gate PC is realized in a high-quality AlGaAs/GaAs…
Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with…
We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K.…
Viscous fluid in an ultrahigh-mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs quantum wells is systematically studied through measurements of negative magnetoresistance (NMR) and photoresistance under microwave radiation, and…
We study the frequency-dependent magnetoconductivity of a strongly correlated nondegenerate 2D electron system in a quantizing magnetic field. We first restore the single-electron conductivity from calculated 14 spectral moments. It has a…
Using a semiclassical Boltzmann equation, we calculate corrections to the Sharvin conductance of a wide 2DEG ballistic contact that result from an electron--electron scattering in the leads. These corrections are dominated by collisions of…
Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such…
We investigate the properties of a system where the itinerant electrons coexist and interact with the preformed local pairs. Using the nonperturbative continuous unitary transformation technique we show that Andreev-type scattering between…
We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers…
A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors (HEMT), which have a large…
The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the…
Injection of photoelectrons into gaseous or liquid dielectrics is a widely used technique to produce cold plasmas in weakly ionized systems for investigating the transport properties of electrons. We report measurements of the collection…
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…
We report low-temperature transport measurements of three-terminal T-shaped device patterned from GaAs/AlGaAs heterostructure. We demonstrate the mode branching and bend resistance effects predicted by numerical modeling for linear…
We have investigated the charge dynamics and the nature of many-body interactions in La- and Pr- doped CaFe2As2. From the infrared part of the optical conductivity, we discover that the scattering rate of mobile carriers above 200 K…
Electrolysis was carried out on fused mixtures of MgCl2, NaCl, KCl and MgB2O4 under an Ar flow at 600C. Electrical resistivity measurements for the grown deposits show an onset of superconducting transition at 37 K in the absence of applied…
Phonon scattering by electrons, or "phonon-electron scattering", has been recognized as a significant scattering channel for phonons in materials with high electron concentration, such as thermoelectrics and nanoelectronics, even at room…
$YBaCuO-Ag$ pressure point contacts with direct conduction are investigated. The excess (relative to the normal state) conductivity mainly caused by fluctuational pairing of electrons above $T_c$ is measured in the temperature interval…
We have analyzed the quasiclassical mechanism of magnetooscillations in the ac- and photoconductivity, related to non-Markovian dynamics of disorder-induced electron scattering. While the magnetooscillations in the photoconductivity are…
We show that electron--electron scattering gives a positive contribution to the resistivity of ballistic multimode wires whose width is much smaller than their length. This contribution is not exponentially small at low temperatures and…