Related papers: Interacting holes in gated WSe$_2$ quantum dots
We study the multi-exciton optical spectrum of vertically coupled GaN/AlN quantum dots with a realistic three-dimensional direct-diagonalization approach for the description of few-particle Coulomb-correlated states. We present a detailed…
By a combination of Hartree-Fock simulations, exact diagonalization, and perturbative calculations, we investigate the ground-state properties of disorder-free circular quantum dots formed in a graphene monolayer. Taking the reference…
We investigate the valence intraband transitions in p-doped self-assembled InAs quantum dots using far-infrared magneto-optical technique with polarized radiation. We show that a purely electronic model is unable to account for the…
We study many-body quantum coherence and interaction blockade in two Josephson-linked Bose-Einstein condensates. We introduce universal operators for characterizing many-body coherence without limitations on the system symmetry and total…
The spin interaction of a hole confined in a quantum dot with the surrounding nuclei is described in terms of an effective magnetic field. We show that, in contrast to the Fermi contact hyperfine interaction for conduction electrons, the…
Electrical currents in a quantum spin Hall insulator are confined to the boundary of the system. The charge carriers can be described as massless relativistic particles, whose spin and momentum are coupled to each other. While the helical…
Step edges of topological crystalline insulators can be viewed as predecessors of higher-order topology, as they embody one-dimensional edge channels embedded in an effective three-dimensional electronic vacuum emanating from the…
A quantum antidot, a submicron depletion region in a two-dimensional electron system, has been actively studied in the past two decades, providing a powerful tool for understanding quantum Hall systems. In a perpendicular magnetic field,…
The coupling between $z$ valleys in the conduction band of a Si quantum well arises from phenomena occurring within several atoms from the interface, thus ruling out a theoretical description based on pure effective mass theory. However,…
In the framework of first-principles calculations, we investigate the structural and electronic properties of graphene in contact with as well as sandwiched between WS$_2$ and WSe$_2$ monolayers. We report the modification of the band…
It is shown that when higher-shell admixtures are included for systems with two valence particles or holes, there are effects which are quite different from those for one-valence-nucleon systems. For example, for nuclei with one valence…
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…
Using an innovative combination of a quasi-Corbino sample geometry and the cross-gate technique, we have developed a method that enables us to separately contact single edge channels in the quantum Hall regime and investigate equilibration…
Multi-valley effective mass theory for silicon quantum well structure is studied taking into account the external fields and the quantum interfaces. It is found that the phenomenological delta function potential, employed to explain the…
Excitons in the weakly interacting regime can be well-described by many-body perturbation theories such as the Bethe-Salpeter equation formalism. However, for materials such as transition metal dichalcogenides moir\'e heterostructures under…
Recently fabricated InSe monolayers exhibit remarkable characteristics that indicate the potential of this material to host a number of many-body phenomena. Here, we consistently describe collective electronic effects in hole-doped InSe…
We present an efficient method of inclusion of the core-valence correlations into the configuration interaction (CI) calculations. These correlations take place in the core area where the potential of external electrons is approximately…
Spin qubits in semiconductor quantum dots offer a gate-tunable platform for quantum information processing. While two-qubit interactions are typically realized through exchange coupling between neighboring spins, coupling spin qubits to…
Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top…
We present results on the effects of spin-orbit coupling on the electronic structure of few-electron interacting quantum dots. The ground-state properties as a function of the number of electrons in the dot $N$ are calculated by means of…