Related papers: Suspended AlGaAs-Integrated Nonlinear Photonics
Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large band…
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $\chi^{(2)}$ and $\chi^{(3)}$ coefficients, a high refractive index ($>3$),…
Integrated photonics plays a central role in modern science and technology, enabling experiments from nonlinear science to quantum information, ultraprecise measurements and sensing, and advanced applications like data communication and…
Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs…
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…
Flat-optics platforms offer new opportunities for the generation of entangled photons by relaxing traditional phase-matching constraints, enabling the use of a broader range of nonlinear materials. Among these, gallium arsenide and aluminum…
Higher-order optical harmonics entered the realm of nanostructured solids being observed recently in optical gratings and metasurfaces with a subwavelength thickness. Structuring materials at the subwavelength scale allows for resonant…
A method to fabricate GaAs microcavities using only a soft mask with an electrolithographic pattern in an inductively coupled plasma etching is presented. A careful characterization of the fabrication process pinpointing the main routes for…
Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large $\chi^\left(2\right)$ and $\chi^\left(3\right)$ optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it…
Next-generation scalable quantum photonic technologies operating at the single photon level rely on bringing together optimized quantum building blocks with minimal optical coupling losses. Achieving this necessitates the heterogeneous…
High Q-factors of microresonators are crucial for nonlinear integrated photonics, as many nonlinear dynamics have quadratic or even cubic dependence on Q-factors. The unique material properties make AlN microresonators invaluable for…
Photonic integrated circuits (PICs) are a key component [1] for future telecommunication networks, where demands for greater bandwidth, network flexibility, low energy consumption and cost must all be met. The quest for all optical…
High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion (GVD)…
We report on the photoluminescence characterization of GaAs quantum dots embedded into AlGaAs nano-wires. Time integrated and time resolved photoluminescence measurements from both an array and a single quantum dot/nano-wire are reported.…
Nonlinear absorption can limit the efficiency of nonlinear optical devices. However, it can also be exploited for optical limiting or switching applications. Thus, characterization of nonlinear absorption in photonic devices is imperative.…
Unidirectional photonic edge states arise at the interface between two topologically-distinct photonic crystals. Here, we demonstrate a micron-scale GaAs photonic ring resonator, created using a spin Hall-type topological photonic crystal…
We review new applications of integrated microcombs in RF and microwave photonic systems. We demonstrate a wide range of powerful functions including a photonic intensity high order and fractional differentiators, optical true time delays,…
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality…
In this Perspective we summarize the status of technological development for large-area and low-noise substrate-transferred GaAs/AlGaAs (AlGaAs) crystalline coatings for interferometric gravitational-wave (GW) detectors. These topics were…
An optoelectronic optimization was carried out for an AlGaAs solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Au backcontacts.…