Related papers: Universal scaling near band-tuned metal-insulator …
The universality of the metal-insulator transition in three-dimensional disordered system is confirmed by numerical analysis of the scaling properties of the electronic wave functions. We prove that the critical exponent $\nu$ and the…
The scaling of the conductivity at the superfluid-insulator quantum phase transition in two dimensions is studied by numerical simulations of the Bose-Hubbard model. In contrast to previous studies, we focus on properties of this model in…
We study the charge transport across a band-tuned metal-insulator transition in two dimensions. For high temperatures $T$ and chemical potentials $\mu$ far from the transition point, conduction is ballistic and the resistance $R(T)$…
We explore the scaling description for a two-dimensional metal-insulator transition (MIT) of electrons in silicon. Near the MIT, $\beta_{T}/p = (-1/p)d(\ln g)/d(\ln T)$ is universal (with $p$, a sample dependent exponent, determined…
We establish the quantum fluctuations $\Delta Q_B^2$ of the charge $Q_B$ accumulated at the boundary of an insulator as an integral tool to characterize phase transitions where a direct gap closes (and reopens), typically occurring for…
We demonstrate a universal scaling form of longitudinal resistance in the quantum critical region of metal-insulator transitions, based on numerical results of three-dimensional Anderson transitions (with and without magnetic field),…
We analyze an interplay between Coulomb blockade and quantum fluctuations in a coherent conductor (with dimensionless conductance $g \gtrsim 1$) attached to an Ohmic shunt. We demonstrate that at T=0 the system can be either an insulator or…
We report a detailed scaling analysis of resistivity \rho(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and…
The doping-induced metal-insulator transition in two-chain systems of correlated fermions is studied using a solvable limit of the t-J model and the fact that various strong- and weak-coupling limits of the two-chain model are in the same…
The metal-insulator transition (MIT) observed in two-dimensional (2D) systems is apparently contradictory to the well known scaling theory of localization. By investigating the conductance of disordered one-dimensional systems with a finite…
We have studied the temperature dependence of resistivity, $\rho$, for a two-dimensional electron system in silicon at low electron densities, $n_s\sim10^{11}$ cm$^{-2}$, near the metal/insulator transition. The resistivity was empirically…
Kubo formula is used to get the scaling behavior of the static conductance distribution of wide wires showing pure non-diagonal disorder. Following recent works that point to unusual phenomena in some circumstances, scaling at the band…
Metal-insulator transitions driven by magnetic fields have been extensively studied in 2D, but a 3D theory is still lacking. Motivated by recent experiments, we develop a scaling theory for the metal-insulator transitions in the…
The established scaling laws of the conductivity with temperature and doping are strong indications for the quantum nature of the metal-insulator transition in YH$_x$. Here we report the first results on the frequency scaling of the…
Recent studies of electrical transport, both theoretical and experimental, near the bandwidth-tuned Mott metal-insulator transition have uncovered apparent quantum critical scaling of the electrical resistivity at elevated temperatures,…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
We introduce a new method to analysis the many-body problem with disorder. The method is an extension of the real space renormalization group based on the operator product expansion. We consider the problem in the presence of interaction,…
The nature of a metal-insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions, as reported in recent experiments of Roddaro et al [1], is examined. We attribute this phenomenon to a splitting of…
We discuss the recently discovered two-dimensional metal-insulator transition in zero magnetic field in the light of the scaling theory of localization. We demonstrate that the observed symmetry relating conductivity and resistivity follows…
We propose a scaling theory of 2D metal insulator transition discovered by Kravchenko and coworkers. In this theory conductance/resistance duality is an exact relation. The exponent of the stretched exponential in $\sigma(T)$ is determined…