Related papers: A magneto-mechanical accelerometer based on magnet…
Straintronic magneto-tunneling junction (s-MTJ) switches, whose resistances are controlled with voltage-generated strain in the magnetostrictive free layer of the MTJ, are extremely energy-efficient switches that would dissipate a few aJ of…
Ensuring high performance, while meeting the power budget is a challenging task as the world is moving towards next-generation computing. Researchers and designers are in search of new solutions for efficient computation. Spintronics…
This paper proposes a spintronic neuron structure composed of a heterostructure of magnets and a piezoelectric with a magnetic tunnel junction (MTJ). The operation of the device is simulated using SPICE models. Simulation results illustrate…
Magnetic tunnel junctions comprising of an insulator sandwiched between two ferromagnetic films are the simplest spintronic devices. Theoretically, these can be modeled by a metallic Hamiltonian in both the lattice and the continuum with an…
The interplay of charge, spin and heat transport is investigated in the fascinating research field of spin caloritronics, the marriage of spintronics and thermoelectrics. Here, many new spin-dependent thermal transport phenomena in magnetic…
This paper describes the advantages and challenges of applying microelectromechanical accelerometer systems (MEMS accelerometers) in order to attain precise, accurate and stateless positioning of telescope mounts. This provides a completely…
The electrically readable complex dynamics of robust and scalable magnetic tunnel junctions (MTJs) offer promising opportunities for advancing neuromorphic computing. In this work, we present an MTJ design with a free layer and two…
Magneto-transport properties in hybrid magnetic tunnel junctions (MTJs) integrating self-assembled monolayers (SAMs) as tunnel barriers are critically influenced by spinterface effects, which arise from the electronic properties at…
Magnetic skyrmions are topological spin textures which are envisioned as nanometre scale information carriers in magnetic memory and logic devices. The recent demonstration of room temperature stabilization of skyrmions and their current…
Over the past decade a large family of spintronic devices have been proposed as candidates for replacing CMOS for future digital logic circuits. Using the recently developed Modular Approach framework, we investigate and identify the…
Scanning tunneling microscopy (STM) and micro-electromechanical systems (MEMS) have traditionally addressed vastly different length scales - one resolving atoms, the other engineering macroscopic motion. Here we unite these two fields to…
Stochastic magnetic tunnel junctions (s-MTJs) are core components for spintronics-based probabilistic computing (p-computing), a promising candidate for energy-efficient unconventional computing. To achieve reliable performance under…
A superconducting magnetometers based on the magnetic field dependence of the Eck step voltage in long Josephson tunnel junctions (LJTJs) is demonstrated. The field to be measured is applied perpendicular to a continuous superconducting…
Inertial sensors based on micro-electromechanical systems (MEMS) technology, such as accelerometers and angular rate sensors, are cost-effective solutions used in inertial navigation systems in a broad spectrum of applications that estimate…
The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate…
Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for…
The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is…
Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However,…