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Laboratory based searches for weakly-interacting slim particles (WISPs) of the light-shining-through-a-wall type (LSW) use visible or near-infrared (NIR) laser light. Low-noise and highly efficient detectors are necessary to improve over…
Recent advances in the development of ultra-low loss silicon nitride (Si3N4)-based photonic integrated circuits have allowed integrated lasers to achieve a coherence exceeding those of fiber lasers and enabled unprecedentedly fast…
We develop a simplified light source at 461 nm for laser cooling of Sr without frequency-doubling crystals but with blue laser diodes. An anti-reflection coated blue laser diode in an external cavity (Littrow) configuration provides an…
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We present a laterally emitting, coupled cavity micro fluidic dye ring laser, suitable for integration into lab-on-a-chip micro systems. The micro-fluidic laser has been successfully designed, fabricated, characterized and modelled. The…
Thermal tuning of the optical refractive index in the waveguides to control light phase accumulation is essential in photonic integrated systems and applications. In silicon photonics, microheaters are mainly realized by metal wires or…
Sapphire is a promising wideband substrate material for visible photonics. It is a common growth substrate for III-nitride light-emitting diodes and laser structures. Doped sapphires are important gain media foundational to the development…
Recent approaches to develop infrared photodetectors characterized by high sensitivities, broadband spectral coverage, easy integration with silicon electronics and low cost have been based on hybrid structures of transition metal…
Light-emitting diodes (LEDs) can bridge the gap between narrow linewidth, expensive lasers and broadband, inefficient thermal globars for low-cost chemical sensing in the mid-infrared (mid-IR). However, the efficiency of III-V based mid-IR…
Koehler transillumination is a powerful imaging method, yet commercial Koehler condensers are difficult to integrate into tabletop systems and make learning the concepts of Koehler illumination difficult. We propose a simple 4f Koehler…
High coherence visible and near-visible laser sources are centrally important to the operation of advanced position/navigation/timing systems as well as classical/quantum sensing systems. However, the complexity and size of these bench-top…
Quantum dot - graphene hybrid materials have raised significant interest due to the unique synergy of the optical properties of colloidal quantum dots (QDs) and the transport properties of graphene. This stimulated the development of…
Wide field-of-view imaging of fast processes in a microscope requires high light intensities motivating the use of lasers as light sources. However, due to their long spatial coherence length lasers are inappropriate for such applications…
The mid-infrared (MIR) spectral range is of immense use for civilian and military applications. The large number of vibrational absorption bands in this range can be used for gas sensing, process control and spectroscopy. In addition, there…
Femtosecond laser modification of fused silica enables precise surface tailoring for the fabrication of micro-optical components such as microlenses and diffractive elements. However, the process is governed by laser-matter interactions…
Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…
Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively…
Light-emitting diodes (LEDs) based on III-V/II-VI materials have delivered a compelling performance in the mid-infrared (mid-IR) region, which enabled wide-ranging applications, including environmental monitoring, defense and medical…
We demonstrate that absorption saturation of a mid-infrared intersubband transition can be engineered to occur at moderate light intensities of the order of 10-20 kW$.$cm$^{-2}$ and at room temperature. The structure consists of an array of…
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…