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Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit…
Controlled doping and understanding its underlying microscopic mechanisms is crucial for advancement of nanoscale electronic technologies, especially in semiconducting single-wall carbon nanotubes (s-SWNTs), where adsorbed counterions are…
The low quality factor (Q) of Single-walled carbon nanotube (SWNT) resonators has limited their sensitivity in sensing application. To this end, we employ the technique of parametric amplification by modulating the spring constant of SWNT…
Recent experiments about the low temperature behaviour of a Single Wall Carbon Nanotube (SWCNT) showed typical Coulomb Blockade (CB) peaks in the zero bias conductance and allowed us to investigate the energy levels of interacting…
We have developed a quantum noise approach to study the phonon transport through nanostructures. The nanostructures acting as phonon channels are attached to two phonon reservoirs. And the temperature drop between the two reservoirs drives…
We present a theoretical analysis of the effect of dielectric confinement on the Coulomb interaction in dielectrically modulated quantum structures. We discuss the implications of the strong enhancement of the electron-hole and…
We report the fabrication and characterization of an electrostatic quantum dot in pure Germanium with an integrated charge measurement transistor. The device uses the Al2O3/Germanium interface for the confinement of carriers in the…
We present an improved nuclear refrigerator reaching 0.3 mK, aimed at microkelvin nanoelectronic experiments, and use it to investigate metallic Coulomb blockade thermometers (CBTs) with various resistances R. The high-R devices cool to…
Nanowire-based light-emitting devices require multi-quantum well heterostructures with high room temperature optical efficiencies. We demonstrate that such efficiencies can be attained through the use of ZnO/Zn(1-x)MgxO core shell quantum…
A quantum-dot thermal transistor consisting of three Coulomb-coupled quantum dots coupled to respective electronic reservoirs by tunnel contacts is established. The heat flows through the collector and emitter can be controlled by the…
We study the low frequency current correlations of an individual single-walled carbon nanotube at liquid He temperature. We have distinguished two physical regimes -- zero dimensional quantum dot and one dimensional quantum wire -- in terms…
Nanowire lasers can be monolithically and site-selectively integrated onto silicon photonic circuits. To assess their full potential for ultrafast opto-electronic devices, a detailed understanding of their lasing dynamics is crucial.…
We show over 100-fold enhancement of the exciton oscillator strength as the diameter of an InGaN nanodisk in a GaN nanopillar is reduced from a few micrometers to less than 40 nm, corresponding to the quantum dot limit. The enhancement…
The performance and scalability of superconducting quantum circuits are fundamentally constrained by non-equilibrium quasiparticles, which induce microwave losses that limit resonator quality factors and qubit coherence times. Understanding…
The behavior of a nanodevice based upon double-walled carbon nanotube oscillators driven by periodically applied thermal gradients (7 and 17 K/nm) is investigated by numerical calculations and classical molecular dynamics simulations. Our…
The current work investigates the performance of dual-gate GaAs-nanowire FET as a charge-qubit device operating at room temperature. In compatibility with the state-of-the-art classical bit technology, it is shown that the single gate of a…
Here we present details on how the cooling effects of an opto-mechanical system are affected beyond the secular approximation. To this end, a laser driven two-level quantum dot (QD) embed- ded in a phononic nano-cavity is investigated for…
A novel method for fast fabrication of mesoscopic multilayered graphene electronic devices utilizing nanoprobes to exfoliate graphite flakes is developed. The magnetoresistance of these devices exhibit pronounced Shubnikov-de Haas…
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements…
Thermal transport in low-dimensional semiconductors is crucial for advancing thermal management in nanoelectronics, quantum devices, and thermoelectric devices. Recent molecular dynamics (MD) studies have identified a nonmonotonic…