Related papers: Theoretical Study of High Performance Germanium Na…
High-stress Si$_3$N$_4$ nanoresonators have become an attractive choice for electro- and optomechanical devices. Membrane resonators can achieve quality factor ($Q$) - frequency ($f$) products exceeding $10^{13}$ Hz, enabling (in principle)…
Planar germanium is currently the only semiconducting platform where high-coherence spin qubits and proximity-induced superconductivity have each been demonstrated. Recent research into spin qubits in Ge/SiGe heterostructures has focused on…
Low dimensional materials provide the possibility of improved thermoelectric performance due to the additional length scale degree of freedom for engineering their electronic and thermal properties. As a result of suppressed phonon…
We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic…
Lattice vibrations within crystalline solids, or phonons, provide information on a variety of important material characteristics, from thermal qualities to optical properties and phase transition behaviour. When the material contains light…
Low-temperature transport properties of a lateral quantum dot formed by overlaying finger gates in a clean one-dimensional channel are investigated. Continuous and periodic oscillations superimposed upon ballistic conductance steps are…
The nonlinear thermoelectric properties of serially coupled quantum dots (SCQDs) embedded in a nanowire connected to metallic electrodes are theoretically studied in the Coulomb blockade regime. We demonstrate that the electron heat current…
Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we…
It is known that the figure of merit ($ZT$) of thin nanowires can be significantly enhanced at room temperature due to the reduction of phonon thermal conductance arising from the increase of boundary scattering of phonons. It is expected…
We perform a first-principles investigation of electron-phonon interactions in silicon and germanium, uncovering distinct non-polaronic spectral and transport fingerprints in these archetypal covalent semiconductors. Using many-body…
Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still widely unexplored quantitatively. In this letter we present the…
The impact of decorated dislocations on the effective thermal conductivity of GaN is investigated by means of equilibrium molecular dynamics simulations via the Green-Kubo approach. The formation of "nanowires" by a few atoms of In in the…
By using non-equilibrium molecular dynamics simulations, we demonstrated that thermal conductivity of Germanium nanowires can be reduced more than 25% at room temperature by atomistic coating. There is a critical coating thickness beyond…
We investigate temperature dependent thermal conductivity k(T) in a single Ge nanowire (NW) using Optothermal Raman Spectroscopy which utilizes the temperature dependence of Raman lines as a local probe for temperature. The experiment was…
In this article we review the thermoelectric properties of three terminal devices with Coulomb coupled quantum dots (QDs) as observed in recent experiments [1,2]. The system we consider consists of two Coulomb-blockade QDs one of which can…
Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for…
Hole spin qubits in quasi one-dimensional structures are a promising platform for quantum information processing because of the strong spin-orbit interaction (SOI). We present analytical results and discuss device designs that optimize the…
In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as…
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron…
A complex approach phonon quantum discrete model (PQDM) was developed to describe dynamics, kinetics and statistics of phonons in carbon nanostructures with zero-chirality of both zig-zag and armchair geometry. The model allows include into…