Related papers: Spin transport properties of spinel vanadate-based…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…
The temperature dependence and anisotropy of optical spectral weights associated with different multiplet transitions is determined by the spin and orbital correlations. To provide a systematic basis to exploit this close relationship…
Magnetic rare-earth orthoferrites $R$FeO$_3$ host a variety of functional properties from multiferroicity and strong magnetostriction, to spin-reorientation transitions and ultrafast light-driven manipulation of magnetism, which can be…
Vanadium spinels (ZnV_2O_4, MgV_2O_4, and CdV_2O_4) exhibit a sequence of structural and magnetic phase transitions, reflecting the interplay of lattice, orbital, and spin degrees of freedom. We offer a theoretical model taking into account…
Topological insulators have emerged as an important material class for efficient spin-charge interconversion. Most topological insulators considered to date are binary or ternary compounds, with the exception of $\alpha$-Sn. Here we report…
Organic spintronics has drawn the interest of the science community due to various applications in spin-valve devices. But to date, an efficient room-temperature Organic Spin Valve device has not been experimentally realized due to the…
Over the past few years, intensive studies of ultrathin epitaxial films of perovskite oxides have often revealed exciting properties like giant magnetoresistive tunnelling and electric field effects. Spinel oxides appear as even more…
We apply the self-interaction corrected local spin density %(SIC-LSD) approximation to study the electronic structure and magnetic properties of the spinel ferrites MnFe$_{2}$O$_{4}$, Fe$_{3}$O$_{4}$, CoFe$_{2}$O$_{4}$, and…
Oxide thin films and interfaces with strong spin-orbit coupling have recently shown exceptionally high charge-to-spin conversion, making them potential spin-source materials for spintronics. Epitaxial strain engineering using oxide…
The novel electronic state of the canted antiferromagnetic (AFM) insulator, strontium iridate (Sr2IrO4) has been well described by the spin-orbit-entangled isospin Jeff = 1/2, but the role of isospin in transport phenomena remains poorly…
Many metallic transition-metal oxides turn insulating when grown as films that are only a few unit-cells thick. The microscopic origins of these thickness induced metal-to-insulator transitions however remain under dispute. Here, we…
The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. Here, current-induced spin-orbit torques…
In the rich phases of van der Waals (vdW) materials featuring intertwined electronic order and collective phenomena, characterizing elementary dynamics that entail the low-energy Hamiltonian and electronic degrees of freedom is of paramount…
In antiferromagnets, the efficient propagation of spin-waves has until now only been observed in the insulating antiferromagnet hematite, where circularly (or a superposition of pairs of linearly) polarized spin-waves propagate over long…
Antiferromagnetic (AFM) spintronics, where magneto-transport is governed by an antiferromagnet instead of a ferromagnet, opens fascinating new perspectives for both fundamental research and device technology, owing to their intrinsic…
Metallic amorphous ferrimagnets of 3d transition metals (TM) and rare earths (RE) with 4f electrons exhibit rich magneto transport behavior due to the interplay between the 3d and 4f magnetic sublattices and their interaction with mobile…
We report magnetoresistance measurements on thin Pt bars grown on epitaxial (001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films. The results can be described in terms of the recently discovered spin Hall magnetoresistance (SMR).…
Spin transport is crucial for future spintronic devices operating at bandwidths up to the terahertz (THz) range. In F|N thin-film stacks made of a ferro/ferrimagnetic layer F and a normal-metal layer N, spin transport is mediated by (1)…
Since its discovery, graphene has been a promising material for spintronics: its low spin-orbit coupling, negligible hyperfine interaction, and high electron mobility are obvious advantages for transporting spin information over long…
Oxygen packaging in transition metal oxides determines the metal-oxygen hybridization and electronic occupation at metal orbitals. Strontium vanadate (SrVO$_3$), having a single electron in a $3d$ orbital, is thought to be the simplest…