Related papers: Utilizing multimodal microscopy to reconstruct Si/…

The interfacial abruptness and uniformity in heterostructures are critical to control their electronic and optical properties. With this perspective, this work demonstrates the 3-D atomistic-level mapping of the roughness and uniformity of…

Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…

Well-ordered stepped semiconductor surfaces attract intense attention owing to the regular arrangements of their atomic steps that makes them perfect templates for the growth of one- dimensional systems, e.g. nanowires. Here, we report on…

The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS…

Regardless of various material design strategies, experimentally achieving substantial and controllable valley splitting in Si/SiGe quantum wells remains a central challenge for ensuring high gate uniformity. This difficulty arises from…

We combined in-situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED) to simultaneously assess atomic-scale…

Heterostructures of topological insulator Bi$_2$Se$_3$ on transition metal dichalcogenides (TMDCs) offer a new materials platform for studying novel quantum states by exploiting the interplay among topological orders, charge orders and…

The notoriously low and fluctuating valley splitting is one of the key challenges for electron spin qubits in silicon (Si), limiting the scalability of Si-based quantum processors. In silicon-germanium (SiGe) heterostructures, the problem…

Conventional quantum transport methods can provide quantitative information on spin, orbital, and valley states in quantum dots, but often lack spatial resolution. Scanning tunneling microscopy, on the other hand, provides exquisite spatial…

Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles…

Advances in hybrid quantum architectures hinge on topological materials that can be synthesized with precise stoichiometric and structural control at the nanoscale. While $Bi_4Te_3$ is a promising candidate due to its dual topological…

Scanning tunneling microscopy is the method of choice for characterizing charge density waves by imaging the variation in atomic-scale contrast of the surface. Due to the measurement principle of scanning tunneling microscopy, the…

The coherence of quantum dot qubits fabricated in semiconductors is often limited by charge noise from defects in gate dielectrics, which are material- and process-dependent. Characterizing these defects is an important step towards…

Recent advances in scanning transmission electron microscopy (STEM) allow to observe solid-state transformations and reactions in materials induced by thermal stimulus or electron beam on the atomic level. However, despite the rate at which…

We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional…

To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and…

The nature of the atomic defects on the hydrogen passivated Si (100) surface is analyzed using deep learning and scanning tunneling microscopy (STM). A robust deep learning framework capable of identifying atomic species, defects, in the…

A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate…

In core/shell quantum dots (QDs), the interface between semiconductors of different chemical character largely determines their optoelectronic properties. In III-V/II-VI systems, this boundary involves pronounced chemical and electronic…

The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy…