Related papers: Zn-doped P-type InAs Nanocrystal Quantum Dots

We present a comprehensive study on the structure and optical properties of Mn-and Co-doped ZnO samples prepared via solid-state reaction method with different dopant concentrations and atmospheres. The samples were structural and…

Doping mobile carriers into ordinary semiconductors such as Si, GaAs, and ZnO was the enabling step in the electronic and optoelectronic revolutions. The recent emergence of a class of "Quantum Materials", where uniquely quantum…

Zinc Phosphide ($Zn_3P_2$) could be the basis for cheap and highly efficient solar cells. Its use in this regard is limited by the difficulty in n-type doping the material. In an effort to understand the mechanism behind this, the…

This study investigates the novelty of the crystalline and electronic structure of (Mg,Ti)-doped ZnO and the co-doped Zn1-x-yMgxTiyO structures using Gaussian and plane-wave basis sets, as implemented in the CP2K code. The goal of…

We report Zn-doping effect in the parent and F-doped LaFeAsO oxy-arsenides. Slight Zn doping in LaFe$_{1-x}$Zn$_{x}$AsO drastically suppresses the resistivity anomaly around 150 K associated with the antiferromagnetic (AFM) spin density…

We find new ferromagnetic semiconductors, Cr-doped BaZn2As2, by employing a combined method of the density functional theory and the quantum Monte Carlo simulation. Due to a narrow band gap of 0.2 eV in host BaZn2As2 and the different…

Two dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic doping. The…

Nearly all ultrawide-bandgap oxides are affected by hole localization that limits $p$-type conductivity and thus potential applications for these materials. Highly localized holes, also known as hole polarons, trap in the vicinity of…

Our predictions, based on density-functional calculations, reveal that surface doping of ZnO nanowires with Bi leads to a linear-in-$k$ splitting of the conduction-band states, through spin-orbit interaction, due to the lowering of the…

In this work, we calculate material gain for long wavelength III-nitride InN and AlInN quantum dot (QD) structures. Strain and QD inhomogeneity are included in the calculations. The study covers (800-2300 nm) wavelength range which is…

Cr-doped ZnO films were fabricated by a new but feasible method, that is, annealing Cr-Zn layers deposited via DC magnetron sputtering in air. Microstructures of the films were investigated using X-ray diffraction, scanning electron…

Successive ionic layer adsorption and reaction (SILAR) method is based on the adsorption and reaction of the ions in the cationic solution and the ionic solution, respectively. This method is simple, inexpensive, large-scale deposition,…

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but…

X-ray absorption near-edge spectroscopy (XANES), photoluminescence, cathodoluminescence and Raman spectroscopy have been used to investigate the chemical states of nitrogen dopants in ZnO nanowires. It is found that nitrogen exists in…

We report the synthesis of colloidal Mn2+-doped ZnO (Mn2+:ZnO) quantum dots and the preparation of room-temperature ferromagnetic nanocrystalline thin films. Mn2+:ZnO nanocrystals were prepared by a hydrolysis and condensation reaction in…

Diamond is an outstanding semiconductor for extreme electronics, yet reproducible n-type doping remains a long-standing challenge. Here we demonstrate stable n-type single-crystal diamond grown in a single step by a precisely controlled…

We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation.…

This study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal-semiconductor-metal (MSM) photodetectors designed for ultraviolet (UV) applications. The proposed device architecture incorporates a…

Scaling of transistors has enabled continuous improvements in logic device performance, especially through materials engineering. However, surpassing horizontal limitations in chip manufacturing requires a vertical, third dimension.…

In this work, nonlinear optical properties of Na: ZnO thin films (Na: ZnO) have been experimentally elaborated. The principal possibility to operate the nonlinear optical features using external laser beams is shown. The Na: ZnO films were…