Related papers: Micromechanical field-effect transistor terahertz …
Multi-particle transverse energy correlation(MTEC) functions are proposed to study minijet production in high energy proton-antiproton collisions. Obtainable with both the D0 and the CDF detector, the high-order MTEC functions are shown to…
A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast detector that is sensitive and able to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present…
We analyze dynamic properties of vertical graphene-base hot-electron transistors (GB-HETs) and consider their operation as detectors of terahertz (THz) radiation using the developed device model. The GB-HET model accounts for the tunneling…
Magnetic force microscopy (MFM) is long established as a powerful tool for probing the local manifestation of magnetic nanostructures across a range of temperatures and applied stimuli. A major drawback of the technique, however, is that…
We demonstrate an optomechanical phase shifter. By electrostatically deflecting the nanofabricated mechanical structure, the effective index of a nearby waveguide is changed and the resulting phase shift is measured using an integrated…
We propose a compact MEMS-based optical autocorrelator based on a micromachined Michelson interferometer in silicon and the two-photon absorption non-linearity in a photodetector. The miniaturized autocorrelator has a scanning range of 1.2…
High-mobility field effect transistors can serve as resonant detectors of terahertz radiation due to excitation of plasmons in the channel. The modeling of these devices previously relied either on approximate techniques, or complex…
Si-PIN detectors can be microstructured to achieve angular-selective particle detection capabilities, which we call active Transverse Energy Filter (aTEF). The microstructuring consists of a honeycomb structure of deep hexagonally-shaped…
Engineering optical properties, such as luminescence purity and charge transfer, is crucial for harnessing the application potential of atomically thin transition metal dichalcogenides (TMDCs). While electrostatic gating is widely applied…
We report on infrared (IR) spectro-microscopy of the electronic excitations in nanometer-thick accumulation layers in FET devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the…
The realization of THz sources is a fundamental aspect for a wide range of applications. Over different approaches, compact THz oscillators can be realized taking advantage of dynamics in antiferromagnetic (AFMs) thin films driven by…
Spintronic terahertz (THz) emitters (STE) based on the inverse spin Hall effect in ferromagnetic/heavy metal (FM/HM) heterostructures have become important sources for THz pulse generation. The design, materials and control of these…
Acquiring full control over a large number of diffraction orders can be strongly attractive in the case of realizing multifunctional devices such as multichannel reflectors. Recently, the concept of metagrating has been introduced which…
Two-dimensional transition metal dichalcogenide (TMD) semiconductors exhibit a wide range of novel phenomena at millielectronvolt (terahertz-frequency) energy scales, including superconducting and correlation-induced insulating gaps that…
We present a lecture demonstration which produces a visible, beating interference pattern that is the optical analog of demonstrations which produce audible, beating sound-wave interference. The setup is a compact, portable Mach-Zehnder…
We have addressed the microscopic transport mechanism at the switching or on-off transition in transition metal dichalcogenide (TMDC) field-effect transistors (FET), which has been a controversial topic in TMDC electronics, especially at…
We show that Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs with feature sizes ranging from 20 nm to 130 nm could operate at room temperature as THz spectrometers in the frequency range from 120 GHz to 9.3 THz with…
Terahertz (THz) nonreciprocal devices are essential for advancing future fundamental science, wireless communications, imaging, and sensing. Current THz nonreciprocal devices mostly rely on magnetic materials, which, however, suffer from…
Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of {\alpha}-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs…
A theoretical non-pertubative treatment is developed to explain the dephasing of electrons in the electronic Mach-Zehnder interferometer via interaction with a near-by partitioned electronic channel, which acts as a "which path" detector.…