Related papers: Realization-dependent model of hopping transport i…
We performed direct calculations of carrier hopping rates in strongly disordered conjugated polymers based on the atomic structure of the system, the corresponding electronic states and their coupling to all phonon modes. We found that the…
The hopping transport of charge carries in 3-dimensional disordered semiconductors is analyzed in this work. It is assumed that the density of localized states is a decreasing function of energy and contribution of thermoactivated jumps…
Charge transport in disordered organic semiconductors occurs by hopping of charge carriers between localized sites that are randomly distributed in a strongly energy dependent density of states. Extracting disorder and hopping parameters…
We present here a model of carrier distribution and transport in semiconductor alloys accounting for quantum localization effects in disordered materials. This model is based on the recent development of a mathematical theory of quantum…
This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the…
Hopping transport, characterized by carrier tunneling between localized states, is a key mechanism in disordered materials such as organic semiconductors, perovskites, nitride alloys, and 2D material-based inks. Two main regimes are…
Localization in one-dimensional disordered or quasiperiodic non-interacting systems in presence of power-law hopping is very different from localization in short-ranged systems. Power-law hopping leads to algebraic localization as opposed…
Starting from Holstein's work on small polaron hopping, the evolution equations for localized and extended states in the presence of atomic vibrations are systematically derived for an amorphous semiconductor. The transition probabilities…
The conventional single-particle Monte Carlo simulation of charge transport in disordered media is based on the truncated density of localized states (DOLS) which benefits from very short time execution. Although this model successfully…
We study the hopping transport of a quantum particle through randomly diluted percolation clusters in two dimensions realized both on the square and triangular lattices. We investigate the nature of localization of the particle by…
For hopping transport in disordered materials, the mobility of charge carriers is strongly dependent on temperature and the electric field. Our numerical study shows that both the energy distribution and the mobility of charge carriers in…
We examine the localization properties of the three-dimensional (3D) Anderson Hamiltonian with off-diagonal disorder using the transfer-matrix method (TMM) and finite-size scaling (FSS). The nearest-neighbor hopping elements are chosen…
Transport in disordered systems often occurs via the variable range hopping (VRH) in the dilute carrier density limit, where electrons hop between randomly distributed localized levels. We study the nonequilibrium transport by a uniform DC…
We introduce a conceptual reformulation of the Mott-Berezinski\u{i} (MB) theory of low-frequency AC conductivity in disordered systems based on localization landscape theory. Instead of assuming uniform localization and fixed hopping…
In the conventional theory of hopping transport the positions of localized electronic states are assumed to be fixed, and thermal fluctuations of atoms enter the theory only through the notion of phonons. On the other hand, in 1D and 2D…
A systematic study of the transport energy in disordered organic semiconductors based on variable range hopping theory has been presented here. The temperature, electric field, material disorder and carrier concentration dependent transport…
We develop a new theoretical scheme for charge transport and thermoelectric response in two-dimensional disordered systems exhibiting crossover from weak localization (WL) to strong localization (SL). The scheme is based on the scaling…
A new method is developed for the study of transport properties of 1D models with random potentials. It is based on an exact transformation that reduces discrete Schr\"odinger equation in the tight-binding model to a two-dimensional…
We provide a phenomenological formula which describes the low-frequency optical absorption of charge carriers in disordered systems with localization. This allows to extract, from experimental data on the optical conductivity, the relevant…
We investigate the localization of electronic states in the integer quantum Hall effect using a magnetic localization landscape (MLL) approach. By studying a continuum Schr\"odinger model with disordered electrostatic potential, we…