Related papers: Edge conductivity in PtSe$_2$ nanostructures
Low-temperature scanning tunneling microscopy and spectroscopy are employed to investigate twin boundaries in stoichiometric FeSe films grown by molecular beam epitaxy. Twin boundaries can be unambiguously identified by imaging the 90{\deg}…
Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity…
Two-dimensional (2D) bismuth oxyselenide (Bi2O2Se) with high electron mobility is advantageous in future high-performance and flexible electronic and optoelectronic devices. However, transfer of thin Bi2O2Se flakes is rather challenging,…
Two-dimensional, solution-processable semiconductor materials are anticipated to be used in low-cost electronic applications, such as transistors and solar cells. Here, lead sulfide nanosheets with a lateral size of several microns are…
Layered transition metal dichalcogenides (TMDs) are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets in at TCDW…
This work reports a systematic study of the evolution of charge transport mechanism in granular ultra-thin films of palladium of thickness varying between 6nm and 2nm. While the films with thickness > 4nm exhibit metallic behaviour, that at…
Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with sputtered…
Understanding thermal transport in silicon nanostructures is crucial for effective thermal management in semiconductor devices. In such nanostructures, boundary scattering can significantly reduce thermal conductivity. Diffusive boundary…
Lateral two-dimensional (2D) transitional metal dichalcogenide (TMD) heterostructures have recently attracted a wide attention as promising materials for optoelectronic nanodevices. Due to the nanoscale width of lateral heterojunctions, the…
Thermoelectric (TE) materials achieve localised conversion between thermal and electric energies, and the conversion efficiency is determined by a figure of merit zT. Up to date, two-dimensional electron gas (2DEG) related TE materials hold…
We describe progress and initial results achieved towards the goal of developing integrated multi-conductor arrays of shielded controlled-impedance flexible superconducting transmission lines with ultra-miniature cross sections and wide…
The polarized reflectivity of $\beta^{\prime\prime}$-(BEDO-TTF)$_5$[CsHg(SCN)$_4$]$_2$ is studied in the infrared range between 60 cm-1 and 6000 cm-1 from room temperature down to 10 K. Already at T=300 K a pseudogap in the optical…
Thin films of the wide band gap semiconductor $\beta$-Ga$_2$O$_3$ have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on…
Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect…
Raman spectroscopy is widely used to assess the quality of 2D materials thin films. This report focuses on $\rm{PtSe_2}$, a noble transition metal dichalcogenide which has the remarkable property to transit from a semi-conductor to a…
TiSe2 is a known Topological semimetal (TSM) having both the semi-metallic and topological characters simultaneously and the Charge density wave (CDW) at below 200K. In the current short article, we study the impact of Pd addition on the…
We report absorption and photoluminescence spectra of Si and SnO$_2$ polycrystalline nanofilms in the UV-Vis-NIR range, featuring discrete bands resulting from transverse quantum confinement. The film thickness ranged 3.9 nm to 12.2 nm,…
Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow…
The near threshold "soft breakdown" measurements of PVC films conductivity are investigated. In a wide range of external electric field strength for various rather thick (>20 mkm) PVC films the resistance shows strong nonlinearity and seems…
To stabilize the working temperature of an equipment, a solid-state thermal resistor is usually a requisite, which could adjust its heat conductance continuously according to the temperature. In this work, the thermal conductivity and the…