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Related papers: Atomically smooth films of CsSb: a chemically robu…

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Amorphous silicon materials and its alloys become extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, the amorphous-crystalline transition, segregation and…

Materials Science · Physics 2009-02-13 A. Csik , G. A. Langer , G. Erdelyi , D. L. Beke , Z. Erdelyi , K. Vad

Light-matter interaction at the atomic scale rules fundamental phenomena such as photoemission and lasing, while enabling basic everyday technologies, including photovoltaics and optical communications. In this context, plasmons --the…

Sb thin films have attracted wide interests due to their tunable band structure, topological phases, and remarkable electronic properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by…

Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order…

Fully CMOS-compatible photonic memory holding devices hold a potential in a development of ultrafast artificial neural networks. Leveraging the benefits of photonics such as high-bandwidth, low latencies, low-energy interconnect and high…

Optics · Physics 2023-08-02 Jacek Gosciniak , Jacob B. Khurgin

Sub-micrometer thin films are promising platforms for emerging flexible photovoltaic devices. Although the current market already produces efficient solar cells, the average wafer thickness of these devices remains far from the…

Materials Science · Physics 2025-04-29 Cesar E. P. Villegas , Enesio Marinho , A. C. Dias , Pedro Venezuela , Alexandre R. Rocha

The development of the next generation of optical phase change technologies for integrated photonic and free-space platforms relies on the availability of materials that can be switched repeatedly over large volumes and with low optical…

Indium antimonide (InSb) is a fundamental material for infrared radiation detectors based on interband transitions. Its narrow bandgap enables detection of infrared radiation within the $3-5 \mu m$ atmospheric window, while its high quantum…

Mesoscale and Nanoscale Physics · Physics 2026-04-27 Yurii M. Lyaschuk , Vadym V. Korotyeyev , Viacheslav A. Kochelap , Oleksandr O. Raichev

Thallium-doped cesium iodide (CsI(Tl)) screens are widely used in X-ray imaging devices because of the columnar structure of CsI(Tl) layer, but few reports focus on the optical role of the substrate in the screen system. In this paper, four…

Instrumentation and Detectors · Physics 2015-03-03 Zhaodong Feng , Peng Jiang , Hongkai Zhang , Bozhen Zhao , Xiubo Qin , Cunfeng Wei , Yu Liu , Long Wei

Employing amorphous superconductors, such as Type-II molybdenum silicide (MoSi), instead of crystalline materials significantly simplifies the material deposition and scalable nanoscale prototyping, beneficial for quantum electronic and…

An accurate knowledge of the optical constants (refractive index $n$ and extinction coefficient $k$) of ScN is crucial for understanding the optical properties of this binary nitride semiconductor as well as for its use in optoelectronic…

Materials Science · Physics 2023-06-19 Duc V. Dinh , Frank Peiris , Jonas Lähnemann , Oliver Brandt

Mono- and bi-alkali antimonides, X$_2$YSb (X and Y from Group I), are promising for next-generation electron emitters due to their capability of producing high-quality electron beams. However, these materials are not yet well understood, in…

Materials Science · Physics 2022-05-31 J. K. Nangoi , M. Gaowei , A. Galdi , J. M. Maxson , S. Karkare , J. Smedley , T. A. Arias

g-C3N4 is a novel semiconductor photocatalyst material; however, the low specific surface area and rapid carrier compliance hinder its photocatalytic performance. On the other hand, the synthesis of 2D g-C3N4 with high crystallinity remains…

Applied Physics · Physics 2023-06-21 Ying Du , Meng Wu , Hui-Qiong Wang , Junyong Kang

Halide perovskite semiconductors such as CsPbBr3 (CLB) are emerging gamma-ray detectors for applications requiring very high energy resolution and potential for fine detector segmentation. Semiconductor detectors typically offer poor time…

Possible existence of topologically protected surface in samarium hexaboride has created a strong need for investigations allowing to distinguish between properties coming from the surface states and those originating in the (remaining)…

Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in…

Following a recently manifested guide of how to team up infrared transparency and high electrical conductivity within semimetal materials [C. Cui $et$ $al.$ Prog. Mater. Sci. 2023, 136, 101112], we evaluate an applicability of the calcium…

The inherently weak nonlinear optical response of bulk materials remains a fundamental limitation in advancing photonic technologies. Nanophotonics addresses this challenge by tailoring the size and morphology of nanostructures to…

Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its favorable nonlinear optical properties and compatibility with CMOS fabrication. Despite the promising and versatile…

Hot wall technique was used to grow block single crystal films of Bi_2Te_3 and solid solutions of Bi_(0.5)Sb_(1.5)Te_3 on mica (muscovite) substrates. X-ray diffraction studies demonstrated that the crystalline c-axis in the films was…

Materials Science · Physics 2014-12-09 L. N. Lukyanova , Yu. A. Boikov , V A Danilov , O A Usov , M P Volkov , V. A. Kutasov
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