Related papers: Atomically smooth films of CsSb: a chemically robu…
This study presents a comprehensive first-principles investigation of the optoelectronic and thermoelectric properties of aluminum antimonide (AlSb) in its cubic (F-43m) and hexagonal (P63mc) phases. Structural optimization was performed…
The discovery of transparent electrodes led to the development of optoelectronic devices such as OLEDs, LCDs, touchscreens, IR sensors, etc. Since ITO has many drawbacks in respect of its production cost and limited transparency in IR,…
The quantum efficiencies (QE) of photocathodes consisting of bulk Nb substrates coated with thin films of Cs2Te are reported. Using the standard recipe for Cs2Te deposition developed for Mo substrates (220 {\AA} Te thickness), a QE ~11% -…
SnS2 stands out as a highly promising two-dimensional material with significant potential for applications in the field of electronics. Numerous attempts have been undertaken to modulate the physical properties of SnS2 by doping with…
In the last decade the ns$^2$ cations (e.g., Pb$^{2+}$ and Sn$^{2+}$) based halides have emerged as one of the most exciting new classes of optoelectronic materials, as exemplified by for instance hybrid perovskite solar absorbers. These…
This work presents a cost-effective alternative technology for the formation of nanostructured semiconductor materials for tunable light emitting devices. CdS and ZnS semiconducting colloid nanoparticles coated with organic shell,…
Sesqui-chalcogenides serve as a critical bridge between traditional semiconductors and quantum materials, offering significant potential in applications such as thermoelectrics, phase change memory, and topological insulators. While…
Cs-based semiconductors like $\mathrm{Cs_3Sb}$ and $\mathrm{Cs_2Te}$ are currently used as photocathodes in particle accelerators. Their performance as electron sources critically depends on their interaction with intense laser sources. In…
Chalcogenide material-based integrated photonic devices have garnered widespread attention due to their unique wideband transparency. Despite their recognized CMOS compatibility, the fabrication of these devices relies predominantly on…
We summarize the development of visible-sensitive gaseous photomultipliers, combining a semitransparent bi-alkali photocathode with a state-of-the-art cascaded electron multiplier. The latter has high photoelectron collection efficiency and…
Group-V elemental monolayers including phosphorene are emerging as promising 2D materials with semiconducting electronic properties. Here, we present the results of first principles calculations on stability, mechanical and electronic…
The beam parameters of complete prototype of the bERLinPro injector that consisted of a lead cathode in an 1.6 cell superconducting cavity were measured. The measurements are discussed in chapter 2 and indicate that the beam emittance is…
Transition metal chalcogenide tin sulfide (SnS) films as alternative noncontact alignment layer for liquid crystals, have been demonstrated and investigated. The SnS has an anisotropic atomic chain structure similar to black Phosphorous…
Highly sensitive and fast photodetector devices with CdSe quantum nanowires as active elements have been developed exploiting the advantages of electro- and wet-chemical routes. Bismuth nanoparticles electrochemically synthesized directly…
Antimony sulfide (Sb$_2$S$_3$), a compound of earth-abundant elements with highly anisotropic, quasi-layered crystal structure, triggered growing interest as a solar absorber in photovoltaics and as a phase change material in memory…
In the present work performance of cesium iodide thin film photocathode is studied in detail. The optical absorbance of cesium iodide thin films have been analyzed in the spectral range of 190 nm to 900 nm. The optical band gap energy of…
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics with its excellent linear and nonlinear optical properties. In particular, its second-order nonlinear susceptibility $\chi^{(2)}$ allows single-photon…
Antimony trisulfide ($Sb_{2}S_{3}$), as an emerging material for integrated photonic devices, has attracted significant attention due to its high index, low loss, and phase-changing property in the optical regime. However, conventional…
Integrated photonic platforms have proliferated in recent years, each demonstrating its own unique strengths and shortcomings. However, given the processing incompatibilities of different platforms, a formidable challenge in the field of…
Epitaxial single-crystalline CsPbBr3 perovskite films on mica, prepared ex-situ, are explored using a low-temperature scanning tunneling microscope (STM) by probing the unoccupied electronic states of their surface in ultra-high vacuum…