Related papers: Disorder-driven localization and electron interact…
Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However,…
The analysis of quantum corrections to magnetoconductivity of thin Au films responsible for by the effect of weak electron localization has made it possible to determine the temperature dependences of electron phase relaxation time in the…
We report on the temperature and field driven metal-insulator transition in disordered Ge:Mn magnetic semiconductors accompanied by magnetic ordering, magnetoresistance reaching thousands of percents and suppression of the extraordinary…
Topological insulators (TIs) are intriguing materials for advanced computing applications based on spintronics because they can host robust spin effects. For instance, TIs have intrinsically large spin generation enabled by their large…
We consider the Anomalous Hall Effect (AHE) in thin disordered ferromagnetic films. Using a microscopic model of electrons in a random potential of identical impurities including spin-orbit coupling, we develop a general formulation for…
The influence of substitutional disorder on the transport properties of heavy-fermion systems is investigated. We extend the dynamical mean-field theory treatment of the periodic Anderson model (PAM) to a coherent-potential approximation…
In this work we present a systematic in-depth study of how we can alter the magneto-transport properties of magnetic topological insulator thin films by tuning the parameters of the molecular beam epitaxy. First, we show how a varying…
We report temperature and density dependences of the spin susceptibility of strongly interacting electrons in Si inversion layers. We measured (i) the itinerant electron susceptibility $\chi^*$ from the Shubnikov-de Haas oscillations in…
Decrease in the size of integrated circuits (IC) and metal interconnects raise resistivity due the amplification of electron scattering effects, which decreases the efficiency of chiplets. While previous studies have investigated the…
Recent experiments on the amorphous magnetic semiconductor Gd_x Si_{1-x}, Phys. Rev. Lett. 77, 4652 (1996), ibid 83, 2266 (1999), ibid 84, 5411 (2000), ibid 85, 848 (2000), have revealed an insulator-metal transition (i-m-t), as a function…
We report the controllable growth and the intriguing transport behavior of high-spin-polarization epitaxial L21-Co2MnAl films, which exhibit a low-temperature (T) resistivity upturn with pronounced T1/2 dependence, close relevance to…
The suppression of superconductivity in disordered systems is a fundamental problem of condensed matter physics. Here we investigate the superconducting niobium-titanium-nitride (Nb_{1-x}Ti_{x}N) thin films grown by atomic layer deposition…
The observation of hydrodynamic transport in the metallic delafossite PdCoO$_2$ has increased interest in this family of highly conductive oxides, but experimental studies so far have mostly been confined to bulk crystals. In this work, the…
A set of stacked two-dimensional electron systems in a perpendicular magnetic field exhibits a three-dimensional version of the quantum Hall effect if interlayer tunneling is not too strong. When such a sample is in a quantum Hall plateau,…
We report strong localization of 2D electron gas in LaAlO3 / SrTiO3 epitaxial thin-film heterostructures grown on (LaAlO3)0.3-(Sr2AlTaO3)0.7 substrates by using pulsed laser deposition with in-situ reflection high-energy electron…
Understanding and controlling the electronic structure of thin layers of quantum materials is a crucial first step towards designing heterostructures where new phases and phenomena, including the metal-insulator transition (MIT), emerge.…
We report the evolution of superconducting properties as a function of disorder in homogeneously disordered epitaxial NbN thin films grown on (100) MgO substrates, studied through a combination of electrical transport, Hall Effect and…
Anderson localization transitions are a universal quantum phenomenon sensitive to the disorder and dimensionality of electronic systems. Over the past decades, this intriguing topic has inspired overwhelmingly more theoretical studies than…
Epitaxial SrTi1-xVxO3 thin films with thicknesses of ~16 nm were grown on (001)-oriented LSAT substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT)…
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal…