Related papers: Skyrmion-mediated Nonvolatile Ternary Memory
Magnetic skyrmions have been in the spotlight since their observation in technologically relevant systems at room temperature. More recently, there has been increasing interest in additional quasiparticles that may exist as…
Implementation of skyrmion based energy efficient and high-density data storage devices requires aggressive scaling of skyrmion size. Ferrimagnetic materials are considered to be a suitable platform for this purpose due to their low…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…
Due to their topological protection and nanometric size, magnetic skyrmions are anticipated to form components of new high-density memory technologies. In metallic systems skyrmion manipulation is achieved easily under a low density…
Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the…
Convolutional neural network (CNN) achieves excellent performance on fascinating tasks such as image recognition and natural language processing at the cost of high power consumption. Stochastic computing (SC) is an attractive paradigm…
The figures-of-merit for reservoir computing (RC), using spintronics devices called magnetic tunnel junctions (MTJs), are evaluated. RC is a type of recurrent neural network. The input information is stored in certain parts of the…
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a major lead for reducing the energy consumption of artificial intelligence (AI). Multiple works have…
Magnetic racetrack memory (RTM) uses a series of either domains or skyrmions as data bits along nanowires. However, it lacks reading error detection capability in nanowires, which requires high electric current density for the deterministic…
The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a significant lead for reducing the energy consumption of artificial intelligence. To achieve maximum…
Magnetic skyrmion holds promise as information carriers in the next-generation memory and logic devices, owing to the topological stability, small size and extremely low current needed to drive it. One of the most potential applications of…
Recent studies have shown that nonlinear magnetization dynamics excited in nanostructured ferromagnets are applicable to brain-inspired computing such as physical reservoir computing. The previous works have utilized the magnetization…
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy…
We investigated the low temperature performance of CoFeB/MgO based perpendicular magnetic tunnel junctions (pMTJs) by characterizing their quasi-static switching voltage, high speed pulse write error rate and endurance down to 9 K. pMTJ…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…