Related papers: Energy Barriers for Thermally Activated Magnetizat…
Artificial ferromagnetic nanofiber networks with new electronic, magnetic, mechanical and other physical properties can be prepared by electrospinning and may be regarded as the base of bio-inspired cognitive computing units. For this…
Energy-efficient switching of magnetization is a central problem in nonvolatile magnetic storage and magnetic neuromorphic computing. In the past two decades, several efficient methods of magnetic switching were demonstrated including spin…
The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of…
The dependence of thermally induced spontaneous magnetization reversal on time-dependent cooling protocols was studied. Slower cooling and longer waiting close to the N\`{e}el temperature of the antiferromagnet ($T_N$) enhances the…
We predict an anomalous bias dependence of the spin transfer torque parallel to interface, $T_{||}$, in magnetic tunnel junctions (MTJ), which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal {\it without}…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…
We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the…
We investigate magnetization reversal processes of magnetic nanorings. Using a recently developed efficient cartesian coordinates fast multipole method, magnetization switching phase diagrams are constructed for such structures. We find…
Reversible straintronic switching of a nanomagnet's magnetization between two stable or metastable states promises ultra-energy-efficient non-volatile memory. Here, we report strain-induced magnetization switching in ~300 nm sized FeGa…
We simulate the spin torque-induced reversal of the magnetization in thin disks with perpendicular anisotropy at zero temperature. Disks typically smaller than 20 nm in diameter exhibit coherent reversal. A domain wall is involved in larger…
We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelectric properties upon reversal of the magnetisation of the…
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate…
Numerical integration of a stochastic Landau-Lifshitz-Gilbert equation is used to study dynamic processes in single-domain nanoscale magnets at nonzero temperatures. Special attention is given to including thermal fluctuations as a Langevin…
We simulate the stochastic Landau-Lifshitz-Gilbert (LLG) dynamics of a uniaxial nanomagnet out to sub-millisecond timescales using a graphical processing unit based micromagnetic code and determine the effect of geometrical tilts between…
We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…
The electrically readable complex dynamics of robust and scalable magnetic tunnel junctions (MTJs) offer promising opportunities for advancing neuromorphic computing. In this work, we present an MTJ design with a free layer and two…
We time-resolve the spin-transfer-torque-induced switching in perpendicularly magnetized tunnel junctions of diameters from 50 to 250 nm in the thermally activated regime. When the field and the spin-torque concur to favor the P to AP…
We study analytically the precessional switching of the magnetization of a thin macrospin. We analyze its response when subjected to an external field along its in-plane hard axis. We derive the exact trajectories of the magnetization. The…
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…