Related papers: Strongly coupled interface electronic states and i…
We present a novel approach to transient Raman spectroscopy, which combines stochastic probe pulses and a covariance-based detection to measure stimulated Raman signals in alpha-quartz. A coherent broadband pump is used to simultaneously…
The interplay between electronic and lattice degrees of freedom is fundamental to charge density wave (CDW) formation, yet the microscopic origin often remains elusive. Here, we investigate the transient optical response of the…
We investigate the ultrafast lattice dynamics in ${1T-TiSe_2}$ using femtosecond reflection pump-probe and pump-pump-probe techniques at room temperature. The time-domain signals and Fourier-transformed spectra show the $A_{1g}$ phonon mode…
Second harmonic conversion from 1550~nm to 775~nm with an efficiency of 400% W$^{-1}$ is demonstrated in a gallium phosphide (GaP) on oxide integrated photonic platform. The platform consists of doubly-resonant, phase-matched ring…
We used Raman scattering for study the phonon modes of self-organized Ge/Si quantum dots, grown by a molecular-beam epitaxy method. It is revealed, that Ge-Ge and Si-Ge vibrational modes considerably intensify at excitation of exciton…
The quantum states of light in an integrated photonics platform provide an important resource for quantum information processing and takes advantage of the scalability and practicality of silicon photonics. Integrated resonators have been…
The point-contact (PC) spectroscopy study of the electron-phonon(boson) interaction (EP(B)I) spectral function in HoNi2B2C reveals phonon maxima at 16 and 22meV and 34meV. For the first time the pronounced high energy maxima at about 50meV…
We demonstrate that in photonic gap antennas composed of an epsilon-near-zero (ENZ) layer embedded within a high-index dielectric, hybrid modes emerge from the strong coupling between the ENZ thin film and the photonic modes of the…
Measuring the quantum dynamics of a mechanical system, when few phonons are involved, remains a challenge. We show that a superconducting microwave resonator linearly coupled to the mechanical mode constitutes a very powerful probe for this…
We report first measurements of the ultrafast dynamics of interfacial electric fields in semiconductor multilayers using pump-probe second harmonic generation (SHG). A pump beam was tuned to excite carriers in all layers of GaAs/GaSb and…
The recent discovery of 2D superconductivity at the interface of BaPbO$_3$ (BPO) and BaBiO$_3$ (BBO) has motivated us to study in depth the electronic and structural properties and the relation between them in this particular…
The thermalization of hot carriers and phonons gives direct insight into the scattering processes that mediate electrical and thermal transport. Obtaining the scattering rates for both hot carriers and phonons currently requires multiple…
To understand the pressure-induced changes in the electronic structure and the electron-phonon interaction in yttrium, we have studied hexagonal close-packed (hcp) yttrium, stable at ambient pressure and double hexagonal close-packed (dhcp)…
The nanoscale resistive switching characteristics of gallium phosphide (GaP) thin films directly grown on Si are investigated as a function of incident light. Firstly, as-grown GaP films show a high RON/ROFF (~10^4), shown to arise from the…
We explore the effect of temperatures between 80 and 720 K on the energy and linewidth of zone-center transverse (TO) and longitudinal (LO) optical phonons in bulk gallium phosphide (GaP) using Fourier transform infrared ellipsometry from…
Phonon polaritons (PhPs) are hybrid photon-phonon waves which enable strong light-matter interactions and subdiffractional confinement, potentially empowering applications in sensing, nonlinear optics and nanoscale energy manipulation. In…
Interface modes have been widely explored in the field of electronics, optics, acoustics and nanophononics. One strategy to generate them is band inversion in one-dimensional superlattices. Most realizations of this type of topological…
The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion…
We report femtosecond time-resolved reflectivity measurements of coherent phonons in tellurium performed over a wide range of temperatures (3K to 296K) and pump laser intensities. A totally symmetric A$_{1}$ coherent phonon at 3.6 THz…
A femtosecond pump-probe setup is described that is optimised for broadband transient reflectivity experiments on solid samples over a wide range of temperatures. By combining a temporal resolution of 45 fs and a broad detection range…