Related papers: Bilayer Stacking Ferrovalley without Breaking Time…
Inner edge state with spin and valley degrees of freedom is a promising candidate to design a dissipationless device due to the topological protection. The central challenge for the application of inner edge state is to generate and…
Polar domains and their manipulation-particularly the creation and dynamic control-have garnered significant attention, owing to their rich physics and promising applications in digital memory devices. In this work, using density functional…
The bulk photovoltaic effect that is intimately associated with crystalline symmetry has been extensively studied in various nonmagnetic materials, especially ferroelectrics with a switchable electric polarization. In order to further…
In order to promote the development of the next generation of nano-spintronic devices, it is of great significance to tune the freedom of valley in two-dimensional (2D) materials. Here, we propose a mechanism for manipulating the valley and…
Two-dimensional magnetism and valleys have recently emerged as two significant research areas, with intriguing properties and practical uses in advanced information technology. Considering the importance of these two areas and their…
Ferroelectric materials are spontaneous symmetry breaking systems characterized by ordered electric polarizations. Similar to its ferromagnetic counterpart, a ferroelectric domain wall can be regarded as a soft interface separating two…
Two-dimensional (2D) group V elemental materials have attracted widespread attention due to their nonzero band gap while displaying high electron mobility. Using first-principles calculations, we propose a series of new elemental bilayers…
Gapless bilayer graphene is susceptible to a variety of spontaneously gapped states. As predicted by theory and observed by experiment, the ground state is however topologically trivial, because a valley-independent gap is energetically…
Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So…
We argue that at finite carrier density and large displacement fields, bilayer graphene is prone to $\ell =0$ and $\ell = 1$ Pomeranchuk Fermi surface instabilities. The broken symmetries are driven by non-local exchange interactions which…
Twistronics rooted in the twist operation towards bilayer van der Waals crystals is of both theoretical and technological importance. The realize of the correlated electronic behaviors under this operation encourages enormous effort to the…
Ferroelectricity and metallicity cannot coexist due to the screening effect of conducting electrons, and a large number of stable monolayers with 1T/1T$^{\prime}$ phase lack spontaneous polarization due to inversion symmetry. In this work,…
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…
We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling…
Through stacking engineering of two-dimensional (2D) materials, a switchable interface polarization can be generated through interlayer sliding, so called sliding ferroelectricity, which is advantageous over the traditional ferroelectricity…
The coexistence of ferroelectric and topological orders in two-dimensional (2D) atomic crystals allows non-volatile and switchable quantum spin Hall states. Here we offer a general design principle for 2D bilayer heterostructures that can…
We analyze density-wave and Pomeranchuk orders in twisted bilayer graphene. This compliments our earlier analysis of the pairing instabilities. We assume that near half-filling of either conduction or valence band, the Fermi level is close…
We theoretically analyze the nonlinear valley Nernst effect (NVNE) as the second-order response of temperature gradient through the semiclassical framework of electron dynamics. Our study shows that an intrinsic nonlinear pure valley…
The generation and control of spin- and valley-polarization in antiferromagnets (AFMs) have garnered increasing attention due to their potential for enabling faster and more stable multifunctional spintronic and valleytronic memory and…
Abstract The valley degree of freedom in two-dimensional materials provides an opportunity to extend the functionalities of valleytronics devices. Very short valley lifetimes demand the ultrafast control of valley pseudospin. Here, we…