Related papers: Star-Mesh Quantized Hall Array Resistance Devices
A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to…
A previous mathematical approach adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices (QHARS) has been further explored with…
A recent mathematical framework for optimizing resistor networks to achieve values in the M{\Omega} through G{\Omega} levels was employed for two specific cases. Objectives here include proof of concept and identification of possible…
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and…
In electrical metrology, the quantum Hall effect is accessed at the Landau level filling factor {\nu} = 2 plateau to define and disseminate the unit of electrical resistance (ohm). The robustness of the plateau is only exhibited at this…
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the…
The field of Quantum Hall metrology had a strong start with the implemntation of GaAs-based devices, given that 2D materials systems provided access to interesting quantum phenomena, including the infrastructure associated with making…
The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied…
The miniaturization of quantum Hall resistance standards (QHRS) using epitaxial graphene on silicon carbide necessitates understanding how device dimensions impact performance. This study reveals a pronounced scale-dependent carrier density…
The quantum Hall effect (QHE) is a cornerstone in the new International System of Units (SI), wherein the base units are derived from seven fundamental constants such as Planck's constant h and elementary charge e. Graphene has…
In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts.…
Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at…
We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the…
This work elaborates on how one may develop high-resistance quantized Hall array resistance standards (QHARS) by using star-mesh transformations for element count minimization. Refinements are made on a recently developed mathematical…
This work introduces a pseudofractal analysis for optimizing high-resistance graphene-based quantized Hall array resistance standards (QHARS). The development of resistance standard device designs through star-mesh transformations is…
It is theoretically possible to combine several Hall bars in arrays to define new quantum standards with perfectly quantized resistance values. We have thus, for the first time, developed and fabricated novel Quantum Hall Array Resistance…
We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto…
Quantum Hall effect (QHE) is the basis of modern resistance metrology. In Quantum Hall Array Resistance Standards (QHARS), several individual QHE elements, each one having the same QHE resistance (typically half of the von Klitzing…
We report on realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicates that the quantized Hall resistance across an array at filling…
We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2}…