Related papers: Feedback enhanced Dyakonov-Shur instability in Gra…
We present a comprehensive theory of the Dyakonov-Shur (DS) plasma instability in current-biased graphene transistors. Using the hydrodynamic approach, we derive equations describing the DS instability in the two-dimensional electron fluid…
We present a theory for plasmonic crystal instability in a semiconductor field-effect transistor with a dual grating gate, designed with strong asymmetry in the crystal elementary cell. Under the action of a dc current bias, we demonstrate…
We study instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equation. With only the acoustic-phonon-limited electron…
Several hydrodynamic descriptions of charge transport in graphene have been presented in the late years. We discuss a general hydrodynamic model governing the dynamics of a two-dimensional electron gas in a magnetized field-effect…
The strongly nonlinear regime of Dyakonov-Shur instability is studied analytically and by computer simulations. The instability leads to high-amplitude stationary oscillations caused by shock wave formation in the FET channel. The…
High-frequency response of a system with drifting electrons in a highly doped graphene and surface polar optical phonons of a polar substrate is considered. For this interacting system, we obtained a dielectric function, frequencies and…
We developed a theory of collective plasma oscillations in a dc current-biased field effect transistor with interdigitated dual grating gate and demonstrated a new mechanism of electron plasma instability in this structure. The instability…
Graphene is a promising candidate for the development of detectors of Terahertz (THz) radiation. A well-known detection scheme due to Dyakonov and Shur exploits the confinement of plasma waves in a field-effect transistor (FET), whereby a…
We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation.…
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…
We study numerically and analytically how the Dyakonov-Shur instability for a two-dimensional (2D) inviscid electronic fluid in a long channel can be affected by an external, out-of-plane static magnetic field. By linear stability analysis…
We investigate the effect of spatial dispersion phenomenon on the performance of graphene-based plasmonic devices at THz. For this purpose, two different components, namely a phase shifter and a low-pass filter, are taken from the…
Electrically injected terahertz (THz) radiation sources are extremely appealing given their versatility and miniaturization potential, opening the venue for integrated-circuit THz technology. In this work, we show that coherent THz…
We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is associated with the Coulomb drag of the quasi-equilibrium…
Understanding of fundamental physics of plasmonic instabilities is the key issue for the design of a new generation of compact electronic devices required for numerous THz applications. Variable width plasmonic devices have emerged as…
Electrons moving in graphene behave as massless Dirac fermions, and they exhibit fascinating low-frequency electrical transport phenomena. Their dynamic response, however, is little known at frequencies above one terahertz (THz). Such…
In this paper we propose and discuss coherent terahertz sources based on charge density wave (plasmon) amplification in two dimensional graphene. The coupling of the plasmons to interband electron-hole transitions in population inverted…
High-mobility field effect transistors can serve as resonant detectors of terahertz radiation due to excitation of plasmons in the channel. The modeling of these devices previously relied either on approximate techniques, or complex…
High input intensities are usually required to efficiently excite optical nonlinear effects in ultrathin structures. This problem is particularly critical at terahertz (THz) frequencies because high input power THz sources are not…
Among its many outstanding properties, graphene supports terahertz surface plasma waves -- sub-wavelength charge density oscillations connected with electromagnetic fields that are tightly localized near the surface[1,2]. When these waves…