Related papers: Quantum Interference Enhances the Performance of S…
Decoherence and imperfect control are crucial challenges for quantum technologies. Common protection strategies rely on noise temporal autocorrelation, which is not optimal if other correlations are present. We develop and demonstrate…
The voltage dependence of nanoelectromechanical effects in a system where the quantized mechanical vibrations of a quantum dot are coupled to coherent tunneling of electrons through a single level in the dot is studied. It is found that…
Interference effects in finite sections of one-dimensional moir\'e crystals are investigated using a Landauer-B\"uttiker formalism within the tight-binding approximation. We explain interlayer transport in double-wall carbon nanotubes and…
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor…
When the electric conductance of a nano-sized metal is measured at low temperatures, it often exhibits complex but reproducible patterns as a function of external magnetic fields, called quantum fingerprints in electric conductance. Such…
Currently available quantum computing hardware based on superconducting transmon architectures realizes networks of hundreds of qubits with the possibility of controlled nearest-neighbor interactions. However, the inherent noise and…
Quantum interference (QI) effects in molecular junctions may be used to obtain large thermoelectric responses. We study the electrical conductance G and the thermoelec- tric response of a series of molecules featuring a quinoid core using…
Quantum transport on structured networks is strongly influenced by interference effects, which can dramatically modify how information propagates through a system. We develop a quantum-information-theoretic framework for scattering on…
A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where…
Superconducting circuits have attracted growing interest in recent years as a promising candidate for fault-tolerant quantum information processing. Extensive efforts have always been taken to completely shield these circuits from external…
Research on spatially inhomogeneous weakly-coupled superconductors has recently received a boost of interest because of the experimental observation of a dramatic enhancement of the kinetic inductance with relatively low losses. Here, we…
The nature of a metal--insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions at integer bulk filling, as reported in recent experiments of Roddaro et al. [1], is addressed. We are particularly…
As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…
The tunneling through an opaque barrier with a strong oscillating component is investigated. It is shown, that in the strong perturbations regime (in contrast to the weak one), higher perturbations rate does not necessarily improve the…
Quantum annealing is an optimization technique which potentially leverages quantum tunneling to enhance computational performance. Existing quantum annealers use superconducting flux qubits with short coherence times, limited primarily by…
The atomic-level structural detail and the quantum effects are becoming crucial to device performance as the emerging advanced transistors, representatively GAAFETs, are scaling down towards sub-3nm nodes. However, a multiscale simulation…
Improving the performance of superconducting qubits and resonators generally results from a combination of materials and fabrication process improvements and design modifications that reduce device sensitivity to residual losses. One…
We show that carbon nanotube transistors exhibit scaling that is qualitatively different than conventional transistors. The performance depends in an unexpected way on both the thickness and the dielectric constant of the gate oxide.…
Conductance switching has been reported in many molecular junction devices, but in most cases has not been convincingly explained. We investigate conductance switching in Pt/stearic acid monolayer/Ti devices using pressure-modulated…
The nanoscale charge environment critically influences semiconductor physics and device performance. While conventional bulk characterization techniques provide volume-averaged defect properties, they lack the spatial resolution to resolve…