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Recently synthesized novel phase of germanium selenide ({\gamma}-GeSe) adopts a hexagonal lattice and a surprisingly high conductivity than graphite. This triggers great interests in exploring its potential for thermoelectric applications.…

Materials Science · Physics 2023-08-11 Zheng Shu , Bowen Wang , Xiangyue Cui , Xuefei Yan , Hejin Yan , Huaxian Jia , Yongqing Cai

Group-IV monochalcogenides are emerging as a new class of layered materials beyond graphene, transition metal dichalcogenides (TMDCs), and black phosphorus (BP). In this paper, we report experimental and theoretical investigations of the…

Mesoscale and Nanoscale Physics · Physics 2017-08-23 Wui Chung Yap , Zhengfeng Yang , Mehrshad Mehboudi , Jia-An Yan , Salvador Barraza-Lopez , Wenjuan Zhu

Two-dimensional (2D) materials may have potential applications in thermoelectric devices. In this work, we systematically investigate the thermoelectric properties of orthorhombic group IV-VI monolayers $\mathrm{AB}$ (A=Ge and Sn; B=S and…

Materials Science · Physics 2017-02-01 San-Dong Guo

We present an analysis of the thermoelectric properties of of $n$-type GeTe and SnTe in relation to the lead chalcogenides PbTe and PbSe. We find that the singly degenerate conduction bands of semiconducting GeTe and SnTe are highly…

Materials Science · Physics 2013-10-22 Xin Chen , David Parker , David J. Singh

Improving the thermoelectric efficiency is one of the greatest challenges in materials science. The recent discovery of excellent thermoelectric performance in simple orthorhombic SnSe crystal offers new promise in this prospect [Zhao et…

Materials Science · Physics 2015-05-12 Guangqian Ding , Guoying Gao , Kailun Yao

Lead chalcogenides are the promising thermoelectric (TE) materials having narrow band gap. The present work investigates the TE behaviour of PbSe in the temperature range 300-500 K. The transport properties of the sample have been studied…

The family of group IV-VI monochalcogenides has an atomically puckered layered structure, and their atomic bond configuration suggests the possibility for the realization of various polymorphs. Here, we report the synthesis of the first…

Among the quasi one-dimensional transition metal tetrachalcogenides (MSe$_4$)$_n$I (M=Nb,Ta), the $n=3$ compounds are the only ones not displaying charge density waves. Instead, they show structural transitions with puzzling transport…

Superconductivity · Physics 2022-12-21 Irián Sánchez-Ramírez , Maia G. Vergniory , Claudia Felser , Fernando de Juan

Using the density functional theory (DFT) in combination with Boltzmann transport theory, the influence of Mg concentrations (x) doping on the thermoelectric properties of Hg1-xMgxSe ternary alloys was systematically investigated. The…

Materials Science · Physics 2023-03-28 Y. Selmani , H. Labrim , A. Jabar , L. Bahmad

In this study, we calculate the $T$=300 K scattering and thermoelectric transport properties of rhombohedral GeTe using first-principles modeling. The room-temperature phase of GeTe has a layered structure, with cross-plane and in-plane…

Materials Science · Physics 2019-08-07 Vahid Askarpour , Jesse Maassen

We present here the thermoelectric properties of olivine-type Fe2GeCh4 (Ch = S, Se and Te) using the linear augmented plane wave method based on first principles density functional calculations. The calculated transport properties using the…

Materials Science · Physics 2016-07-06 Vijay Kumar Gudelli , V Kanchana , G Vaitheeswaran

Electronic and transport properties of CuGaTe$_2$, a hole-doped ternary copper based chalcopyrite type semiconductor, are studied using calculations within the Density Functional Theory and solving the Boltzmann transport equation within…

Materials Science · Physics 2014-01-08 Vijay Kumar Gudelli , V. Kanchana , G. Vaitheeswaran , A. Svane , N. E. Christensen

The record-breaking thermoelectric performance of tin selenide (SnSe) has motivated the investigation of analogue compounds with the same structure. A promising candidate that emerged recently is germanium selenide (GeSe). Here, using…

Materials Science · Physics 2022-02-15 Anderson S. Chaves , Daniel T. Larson , Efthimios Kaxiras , Alex Antonelli

The temperature dependence of the charge carrier density, mobility and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about s = 286…

Materials Science · Physics 2020-05-07 Johannes Boy , Martin Handwerg , Rüdiger Mitdank , Zbigniew Galazka , Saskia F. Fischer

We present a detailed study of the charge transport, optical reflectivity, and thermal transport properties of n-type PbSe crystals. A strong scattering, mobility-limiting mechanism was revealed to be at play at temperatures above 500 K.…

We have investigated the specific heat of optimally-doped iron chalcogenide superconductor Fe(Te0.57Se0.43) with a high-quality single crystal sample. The electronic specific heat Ce of this sample has been successfully separated from the…

Superconductivity · Physics 2011-04-29 J. Hu , T. J. Liu , B. Qian , A. Rotaru , L. Spinu , Z. Q. Mao

GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory…

High mobility phonon-glass semimetal $CuAgSe$ has shown promise in recent years as a potential low-temperature thermoelectric material. It exhibits reasonably strong thermoelectric performance as well as an extremely high carrier mobility,…

Materials Science · Physics 2016-10-19 P. Czajka , M. Yao , C. Opeil

We report the first principles study of structural, elastic, electronic, optical and thermoelectric properties of newly synthesized K2Cu2GeS4. The structural parameters are found to be in good agreement with experimental results. The single…

Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and,…

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